SIS410DN-T1-GE3
MOSFET with 20V drain-source voltage
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $0.665 | $0.66 |
| 10 | $0.651 | $6.51 |
| 30 | $0.641 | $19.23 |
| 100 | $0.632 | $63.20 |
Inventory:5,684
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Part Number : SIS410DN-T1-GE3
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Package/Case : PowerPAK®1212-8
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Brand : Vishay Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : SIS410DN-T1-GE3 DataSheet (PDF)
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Series : SIS410DN
Overview of SIS410DN-T1-GE3
N-Channel 20 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Key Features
- Robustness Against Faults
- Overcurrent and Overvoltage Protection
- Safe Operating Area Monitoring
Application
DC/DC Converter - Notebook - POL DSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | TrenchFET® | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 | Base Product Number | SIS410 |
Warranty & Returns
Warranty, Returns, and Additional Information
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