ZXTN25012EFHTA
SOT-23 ZXTN250 Series NPN Transistor with 1.25 W Power, 12 V Voltage, 6 A Current
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.293 | $1.46 |
50 | $0.239 | $11.95 |
150 | $0.217 | $32.55 |
500 | $0.189 | $94.50 |
3000 | $0.168 | $504.00 |
6000 | $0.160 | $960.00 |
Inventory:9,618
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Part Number : ZXTN25012EFHTA
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Package/Case : SOT23-3
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Brand : Diodes Incorporated
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Components Classification : Single Bipolar Transistors
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Datesheet : ZXTN25012EFHTA DataSheet (PDF)
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Series : ZXTN250
The ZXTN25012EFHTA is a dual PNP medium power high gain transistor in the SOT23 package. It offers high performance and reliability for a wide range of electronic applications, including power management and switching circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the ZXTN25012EFHTA for a visual representation. Note: For detailed technical specifications, please refer to the ZXTN25012EFHTA datasheet. Functionality The ZXTN25012EFHTA is a dual PNP medium power high gain transistor designed to provide efficient amplification and switching capabilities in electronic circuits. Usage Guide Q: What is the maximum power rating of the ZXTN25012EFHTA? Q: Can the ZXTN25012EFHTA be used in audio amplifier circuits? For similar functionalities, consider these alternatives to the ZXTN25012EFHTA:Overview of ZXTN25012EFHTA
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The ZXTN25012EFHTA has a medium power rating suitable for a wide range of electronic applications, typically up to several watts.
A: Yes, the high power gain and PNP configuration of the ZXTN25012EFHTA make it suitable for use in audio amplifier circuits and other signal amplification applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | SMD/SMT | Package / Case | SOT-23-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 12 V | Collector- Base Voltage VCBO | 20 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 160 mV |
Maximum DC Collector Current | 6 A | Pd - Power Dissipation | 1.25 W |
Gain Bandwidth Product fT | 260 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | ZXTN250 |
Brand | Diodes Incorporated | Continuous Collector Current | 6 A |
DC Collector/Base Gain hfe Min | 500 | DC Current Gain hFE Max | 500 at 10 mA, 2 V |
Height | 1 mm | Length | 3.05 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 3000 |
Subcategory | Transistors | Technology | Si |
Width | 1.4 mm | Unit Weight | 0.000282 oz |
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