ZXMN10A07FTA
MOSFET with N-channel configuration, 0.8A current capacity, and 100V voltage rating in SOT23 package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.235 | $1.18 |
50 | $0.187 | $9.35 |
150 | $0.166 | $24.90 |
500 | $0.140 | $70.00 |
3000 | $0.129 | $387.00 |
6000 | $0.122 | $732.00 |
Inventory:6,201
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Part Number : ZXMN10A07FTA
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Package/Case : SOT-23-3
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Brands : Diodes Incorporated
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Components Categories : Single FETs, MOSFETs
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Datesheet : ZXMN10A07FTA DataSheet (PDF)
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Series : ZXMN10A07
The ZXMN10A07FTA is an N-channel enhancement mode MOSFET transistor designed for high-speed switching applications.This transistor features a low threshold voltage and low on-resistance, making it suitable for use in power management and motor control circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the ZXMN10A07FTA for a visual representation. Note: For detailed technical specifications, please refer to the ZXMN10A07FTA datasheet. Functionality The ZXMN10A07FTA is an N-channel MOSFET transistor that enables high-speed switching with low on-resistance, providing efficient power control solutions for a range of electronic applications. Usage Guide Q: Can the ZXMN10A07FTA be used in high-frequency applications? For similar functionalities, consider these alternatives to the ZXMN10A07FTA:Overview of ZXMN10A07FTA
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the ZXMN10A07FTA's high-speed switching capability makes it suitable for high-frequency applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 800 mA | Rds On - Drain-Source Resistance | 700 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 2.9 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 806 mW |
Channel Mode | Enhancement | Series | ZXMN10A07 |
Brand | Diodes Incorporated | Configuration | Single |
Fall Time | 2.1 ns | Forward Transconductance - Min | 1.6 S |
Height | 1.02 mm | Length | 3.04 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 1.5 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 4.1 ns |
Typical Turn-On Delay Time | 1.8 ns | Width | 1.4 mm |
Unit Weight | 0.000282 oz |
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