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SQ3461EV-T1_BE3

MOSFET P-CHANNEL 12-V (D-S) 175C MOSFET

Quantity Unit Price(USD) Ext. Price
1 $0.685 $0.68
200 $0.275 $55.00
500 $0.266 $133.00
1000 $0.261 $261.00

Inventory:9,087

*The price is for reference only.
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Overview of SQ3461EV-T1_BE3

P-Channel 12 V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP

Key Features

  • Fault detection circuitry
  • High precision current sensing
  • Surge suppressor included

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SQ Product Status Active
FET Type P-Channel Technology Si
Drain to Source Voltage (Vdss) 12 V Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 25mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28 nC @ 4.5 V
Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 6 V
Power Dissipation (Max) 5W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive Qualification AEC-Q101
Mounting Type Surface Mount Supplier Device Package 6-TSOP
Package / Case TSOP-6 Manufacturer Vishay
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 8 A Rds On - Drain-Source Resistance 25 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 21 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 5 W
Channel Mode Enhancement Brand Vishay / Siliconix
Configuration Single Fall Time 71 ns
Product Type MOSFET Rise Time 52 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 92 ns
Typical Turn-On Delay Time 12 ns Part # Aliases SQ3461EV-T1_GE3
Unit Weight 0.000705 oz

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