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SI2323DS-T1-GE3

Description: ROHS compliant SOT-23 MOSFETs capable of handling 4.7A current at 750mW power dissipation

Quantity Unit Price(USD) Ext. Price
1 $0.401 $0.40
10 $0.332 $3.32
30 $0.302 $9.06
100 $0.265 $26.50
500 $0.248 $124.00
1000 $0.239 $239.00

Inventory:9,133

*The price is for reference only.
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Overview of SI2323DS-T1-GE3

The SI2323DS-T1-GE3 is a P-channel MOSFET transistor designed for use in a variety of electronic applications. This transistor features a compact size and high efficiency, making it ideal for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

An illustrative circuit diagram showcasing the connections and operation of the SI2323DS-T1-GE3 for better visualization.

Key Features

  • Compact Size: The SI2323DS-T1-GE3 comes in a small package, saving space in circuit designs.
  • High Efficiency: This MOSFET transistor offers high efficiency in power management applications.
  • Low On-Resistance: With low on-resistance, it helps minimize power loss and heat generation.
  • Fast Switching Speed: The SI2323DS-T1-GE3 provides fast switching characteristics, suitable for applications requiring quick response times.

Note: For detailed technical specifications, please refer to the SI2323DS-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power management circuits in various electronic devices.
  • Switching Circuits: Suitable for use in switching circuits for efficient control of electrical signals.
  • Voltage Regulation: Can be utilized in voltage regulation circuits for stable power supply outputs.

Functionality

The SI2323DS-T1-GE3 P-channel MOSFET transistor offers reliable and efficient switching capabilities for power management and control applications, contributing to improved circuit performance.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the control signal or driver circuit.
  • Drain Connection: Connect the drain pin (D) to the load or power input.
  • Source Connection: Connect the source pin (S) to the ground or common reference point.

Frequently Asked Questions

Q: Can the SI2323DS-T1-GE3 be used in high-frequency applications?
A: Yes, the SI2323DS-T1-GE3 is suitable for high-frequency switching applications due to its fast switching speed.

Equivalent

For similar functionalities, consider these alternatives to the SI2323DS-T1-GE3:

  • SI2301DS-T1-GE3: Another P-channel MOSFET transistor with comparable characteristics for various electronic applications.
  • SI2341DS-T1-GE3: This transistor offers similar efficiency and performance, providing an alternative option for power management circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 4.7 A Rds On - Drain-Source Resistance 39 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 12.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 48 ns
Height 1.45 mm Length 2.9 mm
Product Type MOSFET Rise Time 43 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 71 ns
Typical Turn-On Delay Time 25 ns Width 1.6 mm
Part # Aliases SI2323DS-T1-BE3 SI2323DS-GE3 Unit Weight 0.000282 oz

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