SQ7415AEN-T1_GE3
AEC-Q101 Qualified MOSFET with 60V 16A 53W rating
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.717 | $0.72 |
10 | $0.577 | $5.77 |
30 | $0.505 | $15.15 |
100 | $0.436 | $43.60 |
500 | $0.394 | $197.00 |
1000 | $0.373 | $373.00 |
Inventory:7,599
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Part Number : SQ7415AEN-T1_GE3
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Package/Case : PowerPAK-1212-8
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Brand : Vishay
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Components Classification : Single FETs, MOSFETs
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Datesheet : SQ7415AEN-T1_GE3 DataSheet (PDF)
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Series : SQ7415AEN
The SQ7415AEN-T1_GE3 is a high-frequency RF switch designed for use in wireless communication systems. It features low insertion loss, high isolation, and fast switching speed, making it ideal for applications requiring precise RF signal routing. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SQ7415AEN-T1_GE3 RF switch for a visual representation. Note: For detailed technical specifications, please refer to the SQ7415AEN-T1_GE3 datasheet. Functionality The SQ7415AEN-T1_GE3 RF switch provides fast and reliable switching between RF signal paths, ensuring efficient signal routing in wireless communication systems. Usage Guide Q: What is the typical insertion loss of the SQ7415AEN-T1_GE3? Q: Is the SQ7415AEN-T1_GE3 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the SQ7415AEN-T1_GE3:Overview of SQ7415AEN-T1_GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SQ7415AEN-T1_GE3 features low insertion loss, typically less than 0.5 dB.
A: Yes, the SQ7415AEN-T1_GE3 is designed for high-frequency RF signal switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-1212-8 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 16 A | Rds On - Drain-Source Resistance | 65 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 25.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 53 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Tradename | TrenchFET | Series | SQ |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 8 ns | Height | 1.04 mm |
Length | 3.3 mm | Product Type | MOSFET |
Rise Time | 9 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 37 ns | Typical Turn-On Delay Time | 9 ns |
Width | 3.3 mm | Part # Aliases | SQ7415AEN-T1_BE3 |
Unit Weight | 0.032487 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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