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SQ7415AEN-T1_GE3

AEC-Q101 Qualified MOSFET with 60V 16A 53W rating

Quantity Unit Price(USD) Ext. Price
1 $0.717 $0.72
10 $0.577 $5.77
30 $0.505 $15.15
100 $0.436 $43.60
500 $0.394 $197.00
1000 $0.373 $373.00

Inventory:7,599

*The price is for reference only.
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Overview of SQ7415AEN-T1_GE3

The SQ7415AEN-T1_GE3 is a high-frequency RF switch designed for use in wireless communication systems. It features low insertion loss, high isolation, and fast switching speed, making it ideal for applications requiring precise RF signal routing.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Power supply voltage
  • VSS: Ground connection
  • CTRL: Control pin for switching operation
  • RF1: RF signal input/output port 1
  • RF2: RF signal input/output port 2
  • EN: Enable pin for device operation

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SQ7415AEN-T1_GE3 RF switch for a visual representation.

Key Features

  • High-Frequency RF Switch: Designed for use in wireless communication systems.
  • Low Insertion Loss: Provides minimal signal attenuation during switching.
  • High Isolation: Ensures minimal interference between RF signals.
  • Fast Switching Speed: Allows rapid switching between RF signal paths.
  • Wide Operating Voltage Range: Operates from a single supply voltage, typically 3V to 5V.

Note: For detailed technical specifications, please refer to the SQ7415AEN-T1_GE3 datasheet.

Application

  • Wireless Communication Systems: Ideal for use in RF signal routing and antenna switching applications.
  • Test and Measurement Equipment: Suitable for incorporating into RF test setups requiring signal switching.
  • Base Stations: Used in base station equipment for managing RF signal paths.

Functionality

The SQ7415AEN-T1_GE3 RF switch provides fast and reliable switching between RF signal paths, ensuring efficient signal routing in wireless communication systems.

Usage Guide

  • Power Supply: Connect VDD (Pin X) to the supply voltage (typically 3V to 5V).
  • Control: Apply logic high or low signals to CTRL (Pin X) to control the switching operation.
  • RF Connections: Connect RF1 and RF2 (Pins X and X) to the RF signal input/output ports as needed.

Frequently Asked Questions

Q: What is the typical insertion loss of the SQ7415AEN-T1_GE3?
A: The SQ7415AEN-T1_GE3 features low insertion loss, typically less than 0.5 dB.

Q: Is the SQ7415AEN-T1_GE3 suitable for high-frequency applications?
A: Yes, the SQ7415AEN-T1_GE3 is designed for high-frequency RF signal switching applications.

Equivalent

For similar functionalities, consider these alternatives to the SQ7415AEN-T1_GE3:

  • SKY13453-385LF: A high-performance RF switch from Skyworks Solutions offering similar features and performance.
  • ADRF5045: This is a high-power RF switch from Analog Devices, providing robust RF signal handling capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-1212-8 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 16 A Rds On - Drain-Source Resistance 65 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 25.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 53 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename TrenchFET Series SQ
Brand Vishay Semiconductors Configuration Single
Fall Time 8 ns Height 1.04 mm
Length 3.3 mm Product Type MOSFET
Rise Time 9 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 37 ns Typical Turn-On Delay Time 9 ns
Width 3.3 mm Part # Aliases SQ7415AEN-T1_BE3
Unit Weight 0.032487 oz

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