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SQJQ466E-T1_GE3

MOSFET N-Channel Automotive 60V 200A 4-Pin PowerPAK T/R

Inventory:6,939

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Overview of SQJQ466E-T1_GE3

Operating at a maximum temperature of 175°C, the SQJQ466E-T1_GE3 MOSFET is suitable for automotive applications that require reliable performance in harsh environments. It complies with the AEC-Q101 automotive qualification standard, ensuring high quality and durability. The MOSFET is part of the TrenchFET series, known for their superior performance and reliability in power management applications

Key Features

  • TrenchFET® power MOSFET
  • AEC-Q101 qualified
  • 100 % RG and UIS tested
  • Thin 1.9 mm height

    • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    Technology Si Mounting Style SMD/SMT
    Package / Case PowerPAK-8x8-4 Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
    Id - Continuous Drain Current 200 A Rds On - Drain-Source Resistance 1.9 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
    Qg - Gate Charge 135 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 175 C Pd - Power Dissipation 150 W
    Channel Mode Enhancement Qualification AEC-Q101
    Tradename TrenchFET Series SQ
    Brand Vishay / Siliconix Configuration Single
    Fall Time 15 ns Product Type MOSFET
    Rise Time 8 ns Factory Pack Quantity 2000
    Subcategory MOSFETs Typical Turn-Off Delay Time 47 ns
    Typical Turn-On Delay Time 24 ns Unit Weight 0.001764 oz

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