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SQS460EN-T1_GE3

AEC-Q101 Compliant

Quantity Unit Price(USD) Ext. Price
1 $0.646 $0.65
200 $0.251 $50.20
500 $0.241 $120.50
1000 $0.238 $238.00

Inventory:5,585

*The price is for reference only.
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Overview of SQS460EN-T1_GE3

The SQS460EN-T1_GE3 MOSFET is a high-quality N-channel transistor designed for power applications where reliability and efficiency are paramount. With a continuous drain current rating of 8A and a drain source voltage of 60V, this MOSFET can handle high-power loads with ease. The low on resistance of 0.03ohm and a threshold voltage of 2V ensure minimal power loss and precise control over switching operations. Housed in a PowerPAK 1212 package with 8 pins, this MOSFET is easy to install and provides a compact solution for space-constrained applications. Automotive qualification to AEC-Q101 standard ensures that this MOSFET meets the stringent requirements for automotive electronics. With a power dissipation rating of 39W and a maximum operating temperature of 175°C, the SQS460EN-T1_GE3 MOSFET is a reliable choice for demanding power applications

Key Features

  • Ergonomic design
  • Robust construction
  • Low noise operation
  • Durable and reliable
  • High performance capabilities
  • Safe and efficient power supply

Application

  • Power rectification: commonly used to convert alternating current (AC) to direct current (DC) in power supplies.
  • Voltage clamping: protects sensitive electronic components from transient voltage spikes or ESD events.
  • Flyback diode: used in inductive load circuits to suppress voltage spikes when the current is interrupted.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-1212-8 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 8 A Rds On - Drain-Source Resistance 36 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 13 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 39 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename TrenchFET Series SQ
Brand Vishay / Siliconix Configuration Single
Fall Time 8 ns Forward Transconductance - Min 16 S
Height 1.04 mm Length 3.3 mm
Product Type MOSFET Rise Time 8 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 19 ns
Typical Turn-On Delay Time 5 ns Width 3.3 mm
Part # Aliases SQS460EN-T1_BE3 Unit Weight 0.032487 oz

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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