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SQ2308CES-T1_GE3

High Quality N-Channel MOSFET for Automotive Systems

Inventory:6,442

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  • 365 Days Quality Guarantee
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Overview of SQ2308CES-T1_GE3

Designed for efficiency and reliability, the SQ2308CES-T1_GE3 Small Signal Field-Effect Transistor is a dependable choice for engineers and hobbyists alike. Its N-Channel configuration and Silicon construction make it a versatile component for various electronic applications. The TO-236AB package with 3 pins ensures easy integration into circuit designs while meeting Halogen Free and RoHS compliance standards for environmental safety. Trust the SQ2308CES-T1_GE3 for your next electronics project

Key Features

  • Silicon-Gated Power Device
  • AEC-Q101 Qualified
  • High-Current Capable

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series TrenchFET® Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 150mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 205 pF @ 30 V
Power Dissipation (Max) 2W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive Qualification AEC-Q101
Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 Base Product Number SQ2308

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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