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SQ2301ES-T1-GE3

Vishay SQ2301ES-T1-GE3 P-channel MOSFET Transistor, 2.2 A, -20 V, 3-Pin SOT-23

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Overview of SQ2301ES-T1-GE3

The SQ2301ES-T1-GE3 is a high-frequency enhancement-mode power MOSFET designed for power management applications.This MOSFET features a low ON-resistance and high switching speed,making it ideal for efficient power conversion and regulation.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:S Gate Connection
  • D:S Drain Connection
  • S:S Source Connection
  • GND:Ground Connection

Key Features

  • High-Frequency Operation:The SQ2301ES-T1-GE3 is designed for high-frequency operation,making it suitable for applications requiring fast switching.
  • Low ON-Resistance:This MOSFET offers low ON-resistance,allowing for efficient power management and reduced power loss.
  • Enhancement-Mode Design:Features enhancement-mode operation for easier control and integration into power circuits.
  • High Switching Speed:The SQ2301ES-T1-GE3 provides high switching speeds for rapid power regulation and conversion.

Note:For detailed technical specifications,please refer to the SQ2301ES-T1-GE3 datasheet.

Application

  • Power Management:Suitable for power management applications such as voltage regulation,load switching,and power amplification.
  • Switching Power Supplies:Ideal for use in switching power supplies and DC-DC converters due to its high-frequency and high-speed characteristics.
  • Motor Control:Can be utilized in motor control circuits for efficient power handling and control.

Functionality

The SQ2301ES-T1-GE3 is a high-frequency power MOSFET designed for power management applications.It offers low resistance and high switching speeds for efficient power regulation and conversion.

Frequently Asked Questions

Q:What is the maximum operating frequency of the SQ2301ES-T1-GE3?
A:The SQ2301ES-T1-GE3 is designed for high-frequency operation,with a maximum operating frequency specified in the datasheet.

Q:Can the SQ2301ES-T1-GE3 handle high power levels?
A:Yes,the SQ2301ES-T1-GE3 features low ON-resistance and high switching speeds,allowing it to handle high power levels efficiently.

Equivalent

For similar functionalities,consider these alternatives to the SQ2301ES-T1-GE3:

  • IRF3205:A power MOSFET with similar characteristics and performance to the SQ2301ES-T1-GE3,offering high efficiency in power management applications.
  • FDP8878:A high-frequency power MOSFET suitable for power regulation and conversion applications,providing comparable features to the SQ2301ES-T1-GE3.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Qualification AEC-Q101
Tradename TrenchFET Series SQ
Brand Vishay / Siliconix Height 1.45 mm
Length 2.9 mm Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Width 1.6 mm Unit Weight 0.000282 oz

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