SIR440DP-T1-GE3
SIR440DP-T1-GE3 is a MOSFET with 20V Vds and 20V Vgs, housed in a PowerPAK SO-8 configuration
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Part Number : SIR440DP-T1-GE3
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Package/Case : PowerPAKSO-8
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : SIR440DP-T1-GE3 DataSheet (PDF)
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Series : SIR440DP
The SIR440DP-T1-GE3 is a 40V automotive n-channel MOSFET designed for use in power management applications in automotive systems. This MOSFET features a low on-resistance and high switching speed, making it ideal for efficient power switching and control in automotive electronics. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the usage of the SIR440DP-T1-GE3 MOSFET in automotive power management applications. Note: For detailed technical specifications, please refer to the SIR440DP-T1-GE3 datasheet. Functionality The SIR440DP-T1-GE3 MOSFET serves as a reliable and efficient component in automotive power management, allowing for precise control and switching of electrical loads in vehicles. Usage Guide Q: What is the maximum voltage rating for the SIR440DP-T1-GE3? Q: How does the low on-resistance of the MOSFET benefit automotive applications? For similar functionalities, consider these alternatives to the SIR440DP-T1-GE3:Overview of SIR440DP-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SIR440DP-T1-GE3 can handle a maximum voltage of 40V, suitable for automotive power systems.
A: The low on-resistance reduces power loss and heat generation, making the SIR440DP-T1-GE3 efficient for power management in vehicles.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V | Id - Continuous Drain Current | 60 A |
Rds On - Drain-Source Resistance | 1.55 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 150 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
Tradename | TrenchFET, PowerPAK | Series | SIR |
Brand | Vishay Semiconductors | Configuration | Single |
Product Type | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Part # Aliases | SIR440DP-GE3 |
Unit Weight | 0.017870 oz |
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