IXFN60N60
Semiconductor Modules 600V 60A Discrete
Inventory:8,114
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Part Number : IXFN60N60
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Package/Case : SOT227-4
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXFN60N60 DataSheet (PDF)
Overview of IXFN60N60
When it comes to Power MOSFETs for industrial applications, the IXFN60N60 from the N-Channel HiPerFET™ Standard series stands out for its low gate charge and excellent ruggedness. Ideal for both hard switching and resonant mode applications, this MOSFET offers superior performance and reliability. With its fast intrinsic diode, it's a top choice for engineers and designers looking for efficient and dependable solutions
Key Features
- High Speed Operation
- Ruggedized Package
- Fully Isolated Design
- Low Temperature Stability
Application
- Advanced power technology
- Efficient power management
- Compact size
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Drain-Source Voltage (V) | 600 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.08 |
| Continuous Drain Current @ 25 ℃ (A) | 60 | Gate Charge (nC) | 380 |
| Input Capacitance, CISS (pF) | 15000 | Thermal resistance [junction-case] (K/W) | 0.18 |
| Configuration | Single | Package Type | SOT-227 |
| Power Dissipation (W) | 694 | Maximum Reverse Recovery (ns) | 250 |
| Sample Request | No |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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