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2SD2351T106V

50V 150mA NPN BJT transistors

Quantity Unit Price(USD) Ext. Price
1 $0.226 $0.23
200 $0.087 $17.40
500 $0.085 $42.50
1000 $0.083 $83.00

Inventory:9,643

*The price is for reference only.
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Overview of 2SD2351T106V

The 2SD2351T106V is a high-speed switching transistor designed for use in various electronic applications. This NPN transistor is specifically designed for high-speed switching and features low saturation voltage, making it suitable for use in switching power supplies, inverters, and other high-speed switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2SD2351T106V transistor for a visual representation.

Key Features

  • High-Speed Switching: The 2SD2351T106V is designed for high-speed switching applications, ensuring rapid performance in electronic circuits.
  • Low Saturation Voltage: This transistor features low saturation voltage, reducing power dissipation and improving efficiency in switching circuits.
  • High Current Gain: With high current gain, the 2SD2351T106V provides amplification and switching capabilities in electronic circuits.
  • Low Thermal Resistance: The transistor has low thermal resistance, enhancing its thermal performance and reliability in various applications.

Note: For detailed technical specifications, please refer to the 2SD2351T106V datasheet.

Application

  • Switching Power Supplies: Ideal for use in high-speed switching power supply circuits where fast switching and low power dissipation are crucial.
  • Inverter Systems: Suitable for driving high-speed switching circuits in inverter systems for various applications.
  • Electronic Switching Circuits: Used in electronic circuits that require high-speed switching with low power loss.

Functionality

The 2SD2351T106V is a high-speed NPN transistor designed for efficient switching and amplification in electronic circuits, providing low saturation voltage and high current gain for enhanced performance.

Usage Guide

  • Emitter Connection: Connect the Emitter pin to the ground or common reference point in the circuit.
  • Base Input: Apply the input signal or control voltage to the Base pin to control the transistor's switching operation.
  • Collector Output: Take the output from the Collector pin to utilize the amplified or switched signal in the circuit.

Frequently Asked Questions

Q: What are the typical applications of the 2SD2351T106V transistor?
A: The 2SD2351T106V is commonly used in high-speed switching power supplies, inverter systems, and electronic switching circuits where fast switching and low saturation voltage are essential.

Q: Does the 2SD2351T106V require external heat sinks for cooling?
A: The 2SD2351T106V features low thermal resistance and may not require external heat sinks in many applications, but thermal considerations should be evaluated based on the specific operating conditions.

Equivalent

For similar functionalities, consider these alternatives to the 2SD2351T106V:

  • 2SC945: This is a complementary NPN transistor that can be considered for similar high-speed switching applications.
  • 2N3904: A widely used NPN transistor suitable for general-purpose amplification and switching applications with moderate speed requirements.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-323-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 50 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 12 V Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 150 mA Pd - Power Dissipation 200 mW
Gain Bandwidth Product fT 250 MHz Maximum Operating Temperature + 150 C
Series 2SD2351 Brand ROHM Semiconductor
Continuous Collector Current 150 mA DC Collector/Base Gain hfe Min 820
DC Current Gain hFE Max 820 at 1 mA, 5 V Height 0.8 mm
Length 2 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.25 mm
Unit Weight 0.000176 oz

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