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IXTA130N10T

TO-263 N-Channel MOSFET rated for 100V and 130A

Quantity Unit Price(USD) Ext. Price
1 $2.654 $2.65
200 $1.027 $205.40
500 $0.991 $495.50
1000 $0.973 $973.00

Inventory:5,128

*The price is for reference only.
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Overview of IXTA130N10T

The IXTA130N10T is a power MOSFET featuring a low on-state resistance and high current capability. It is designed for use in power applications where efficiency and reliability are crucial.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal
  • DRAIN: Drain terminal
  • SOURCE: Source terminal
  • NC: No Connection

Circuit Diagram

Include a circuit diagram showing the connections and usage of the IXTA130N10T MOSFET for better understanding.

Key Features

  • Low On-State Resistance: Provides efficient power handling with minimal voltage drop.
  • High Current Capability: Capable of handling high currents for power applications.
  • Enhanced Power Efficiency: Offers improved power efficiency in switching applications.
  • Fast Switching Speed: Features fast turn-on and turn-off times for responsive operation.
  • Robust Construction: Designed for reliable performance under high power conditions.

Note: For detailed technical specifications, please refer to the IXTA130N10T datasheet.

Application

  • Power Electronics: Ideal for use in power supplies, motor control, and other power management applications.
  • Switching Circuits: Suitable for switching circuits and high-power amplifiers.
  • Industrial Controls: Used in industrial control systems for efficient power handling.

Functionality

The IXTA130N10T MOSFET is a power transistor that enables efficient power handling and switching in various electronic circuits.

Usage Guide

  • Gate Connection: Connect the gate terminal to the driving circuit for controlling the MOSFET.
  • Source/Drain Connections: Connect the source and drain terminals in the circuit as per the application requirements.

Frequently Asked Questions

Q: Is the IXTA130N10T suitable for high-frequency applications?
A: While primarily designed for power applications, the IXTA130N10T can also be used in certain high-frequency circuits; however, it's recommended to check the datasheet for detailed specifications.

Equivalent

For similar power MOSFET options, consider these alternatives to the IXTA130N10T:

  • IXFA140N10T: A power MOSFET with comparable specifications from the same manufacturer, suitable for power applications.
  • IRF540N: This MOSFET offers similar power handling capabilities and can be used as a substitute for the IXTA130N10T in certain applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 100 Maximum On-Resistance @ 25 ℃ (Ohm) 0.0091
Continuous Drain Current @ 25 ℃ (A) 130 Gate Charge (nC) 104
Input Capacitance, CISS (pF) 5080 Thermal resistance [junction-case] (K/W) 0.42
Configuration Single Package Type TO-263
Typical Reverse Recovery Time (ns) 67 Power Dissipation (W) 360
Sample Request Yes Check Stock Yes

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