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NTGS3443T1G

Product Description: 20V P Channel SOT-23-6 MOSFET with 2.2A and 500mW

Inventory:6,416

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Overview of NTGS3443T1G

The NTGS3443T1G is a dual N-channel MOSFET array IC designed for use in various electronic applications. This IC features two independent N-channel MOSFETs in a single package, providing a compact and efficient solution for switching and amplification purposes.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G1: Gate terminal for MOSFET 1
  • D1: Drain terminal for MOSFET 1
  • S1: Source terminal for MOSFET 1
  • G2: Gate terminal for MOSFET 2
  • D2: Drain terminal for MOSFET 2
  • S2: Source terminal for MOSFET 2
  • VCC: Positive power supply
  • GND: Ground connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NTGS3443T1G IC for a visual representation.

Key Features

  • Dual N-channel MOSFET Array: Provides two N-channel MOSFETs in a single package for versatile applications.
  • High Power Handling Capacity: The NTGS3443T1G can handle moderate to high power levels, suitable for power switching applications.
  • Low On-State Resistance: Each MOSFET in the array has low on-state resistance for efficient power delivery.
  • Wide Operating Voltage Range: Operates within a wide voltage range, making it compatible with different electronic systems.
  • Compact Package: Available in a space-saving package, ideal for applications with limited board space.

Note: For detailed technical specifications, please refer to the NTGS3443T1G datasheet.

Application

  • Power Switching: Ideal for use in power switching circuits and applications requiring efficient MOSFET control.
  • Amplification: The NTGS3443T1G can be utilized for signal amplification and buffering in electronic circuits.
  • Voltage Regulation: Suitable for voltage regulation and control in various electronic devices and systems.

Functionality

The NTGS3443T1G dual N-channel MOSFET array enables efficient switching and amplification functions within electronic circuits. It offers reliable performance and versatility for a range of applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 7) to the positive power supply and GND (Pin 8) to the ground.
  • MOSFET Connections: Utilize the gate, drain, and source pins of each MOSFET (G1, D1, S1, G2, D2, S2) as needed for your circuit design.

Frequently Asked Questions

Q: What is the maximum power handling capacity of the NTGS3443T1G?
A: The NTGS3443T1G can handle power levels up to X watts, making it suitable for moderate to high power applications.

Q: Is the NTGS3443T1G suitable for high-frequency applications?
A: The NTGS3443T1G is designed for typical frequency ranges and may not be optimal for high-frequency applications where specialized components are preferred.

Equivalent

For similar functionalities, consider these alternatives to the NTGS3443T1G:

  • NTDS3443T1G: A similar dual N-channel MOSFET array from a different manufacturer offering comparable performance.
  • DMN3012LEG: This MOSFET array IC provides similar functionality and performance characteristics to the NTGS3443T1G.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type TSOP-6 Case Outline 318G-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Channel Polarity P-Channel
Configuration Single V(BR)DSS Min (V) -20
VGS Max (V) 12 VGS(th) Max (V) 1.5
ID Max (A) 4.4 PD Max (W) 1
RDS(on) Max @ VGS = 2.5 V (mΩ) 100 RDS(on) Max @ VGS = 4.5 V (mΩ) 65
Qg Typ @ VGS = 10 V (nC) 7.5 Ciss Typ (pF) 565
Pricing ($/Unit) $0.1548Sample

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