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SI1013CX-T1-GE3

Packed in a SC-89 package with 3 pins

Inventory:9,928

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Overview of SI1013CX-T1-GE3

The SI1013CX-T1-GE3 is a low-power, low-capacitance MOSFET specifically designed for RF switch applications in mobile devices. This MOSFET features a compact design and high efficiency, making it ideal for RF signal switching in small form factor electronics.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal
  • D: Drain terminal
  • S: Source terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI1013CX-T1-GE3 MOSFET for a visual representation.

Key Features

  • Low-Power Consumption: The SI1013CX-T1-GE3 offers a low-power design suitable for battery-operated devices.
  • Low Capacitance: With its low capacitance, this MOSFET minimizes signal loss and distortion in RF applications.
  • High Efficiency: Provides high efficiency in signal switching operations, ensuring reliable performance in mobile communications.
  • Compact Size: Designed in a small form factor, the SI1013CX-T1-GE3 saves space in device layouts.

Note: For detailed technical specifications, please refer to the SI1013CX-T1-GE3 datasheet.

Application

  • Mobile Devices: Perfect for RF switch applications in smartphones, tablets, and other mobile gadgets.
  • Wireless Communication Systems: Suitable for use in wireless communication systems to facilitate signal routing.
  • RF Signal Switching: Ideal for applications requiring high-frequency signal switching with minimal loss.

Functionality

The SI1013CX-T1-GE3 MOSFET is designed to efficiently switch RF signals in mobile devices, ensuring seamless communication and connectivity.

Usage Guide

  • Connection: Connect the G (Gate), D (Drain), and S (Source) terminals as per the application requirements.
  • Power Supply: Apply the appropriate biasing and power supply voltages for optimal performance.
  • Signal Routing: Utilize the MOSFET for RF signal routing and switching based on system needs.

Frequently Asked Questions

Q: Can the SI1013CX-T1-GE3 be used in high-frequency applications?
A: Yes, the SI1013CX-T1-GE3 is suitable for high-frequency RF signal switching applications with its low capacitance and high efficiency.

Q: Is the SI1013CX-T1-GE3 compatible with 5G technology?
A: The SI1013CX-T1-GE3 can be used in 5G devices for RF signal routing and switching, enhancing connectivity and performance.

Equivalent

For similar functionalities, consider these alternatives to the SI1013CX-T1-GE3:

  • SKY13298-321LF: A low-capacitance RF MOSFET suitable for RF switch applications in compact devices.
  • PE4259-53: This RF switch IC provides efficient signal routing capabilities for mobile communication systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 450 mA
Rds On - Drain-Source Resistance 760 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 1.65 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 190 mW Channel Mode Enhancement
Tradename TrenchFET Series SI1
Brand Vishay Semiconductors Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Unit Weight 0.000106 oz

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