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LSIC1MO120E0120

Power dissipation rating of 139W at a case temperature of 25°C

Quantity Unit Price(USD) Ext. Price
1 $12.843 $12.84
200 $4.970 $994.00
500 $4.796 $2,398.00
1000 $4.710 $4,710.00

Inventory:5,005

*The price is for reference only.
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Overview of LSIC1MO120E0120

Littelfuse is known for its high-quality semiconductor products, and the LSIC1MO120E0120 is no exception. With cutting-edge Silicon Carbide technology, this MOSFET offers superior performance compared to traditional silicon-based devices, making it a top choice for demanding applications in industries such as automotive, industrial, and renewable energy

Key Features

  • High-reliability operation with minimal failure rate
  • Compact size and high-power density for small applications
  • Low input current ripple for improved reliability
  • High-frequency operation up to 30 kHz

Application

  • Advanced UPS technology
  • Solar inverters for all
  • Motor drives for industry

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
FET Type N-Channel Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 150mOhm @ 14A, 20V
Vgs(th) (Max) @ Id 4V @ 7mA Gate Charge (Qg) (Max) @ Vgs 80 nC @ 20 V
Vgs (Max) +22V, -6V Input Capacitance (Ciss) (Max) @ Vds 1125 pF @ 800 V
Power Dissipation (Max) 139W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-247AD
Package / Case TO-247-3 Base Product Number LSIC1MO120

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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