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IXFN70N120SK

Field-effect transistor for power applications

Inventory:5,238

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Overview of IXFN70N120SK

Experience the future of industrial power management with the IXFN70N120SK SiC mosfet. This advanced component features a 3000V isolation rating and a durable UL certified SOT227B package, providing exceptional safety and reliability for industrial applications. With a kelvin connection pin for enhanced efficiency, this mosfet excels in high-speed switch mode power supplies and pulsed power systems. Its impressive power cycling characteristics and rapid, low losses switching behavior make the IXFN70N120SK the go-to choice for demanding industrial environments

Key Features

International standard packages

JEDEC TO-264 AA, epoxy meet UL94V-0, flammability classification

miniBLOC with Aluminium nitride isolation

Low RDS (on) HDMOSTM process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS) rated

Low package inductance

Fast intrinsic Rectifier

Application

DC-DC converters

Synchronous rectification

Battery chargers

Switched-mode and resonant-mode power supplies

DC choppers

Temperature and lighting controls

Low voltage relays

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
FET Type N-Channel Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id 4V @ 15mA Gate Charge (Qg) (Max) @ Vgs 161 nC @ 20 V
Vgs (Max) +20V, -5V Input Capacitance (Ciss) (Max) @ Vds 2790 pF @ 1000 V
Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN70

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