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APT75GP120J

1200V N-Channel IGBT Transistor Module

Inventory:9,472

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Overview of APT75GP120J

The APT75GP120J is a power MOSFET transistor module designed for high-power applications. It features a high current rating and low on-state resistance, making it suitable for power switching and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Positive power supply
  • G: Gate control
  • D: Drain connection
  • S: Source connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the APT75GP120J module for a visual representation.

Key Features

  • High Current Rating: The APT75GP120J can handle high currents, making it suitable for power applications.
  • Low On-State Resistance: With low RDS(on), this module offers efficient power switching capabilities.
  • High Power Dissipation: Capable of dissipating high power levels to withstand demanding conditions.
  • Fast Switching Speed: Provides rapid switching for motor control and power conversion systems.
  • Overtemperature Protection: Includes protection mechanisms to prevent overheating under high loads.

Note: For detailed technical specifications, please refer to the APT75GP120J datasheet.

Application

  • Power Inverters: Ideal for use in power inverters and converters.
  • Motor Drives: Suitable for motor control applications requiring high power handling.
  • Switching Circuits: Used in various power switching circuits for efficient power management.

Functionality

The APT75GP120J is a power MOSFET module designed for high-current and high-power applications. It offers efficient power switching and control capabilities for diverse industrial and automotive applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate (G) for switching operations.
  • Power Connections: Connect the drain (D) and source (S) pins for power transmission.
  • Heat Dissipation: Ensure proper heat sinking for effective heat dissipation under high load conditions.

Frequently Asked Questions

Q: Can the APT75GP120J be used for high-frequency applications?
A: While the APT75GP120J offers fast switching speeds, it is primarily designed for high-power applications rather than high-frequency operations.

Q: Does the APT75GP120J require external heat sinking?
A: Depending on the application and power levels, external heat sinking may be necessary to maintain optimal operating temperatures.

Equivalent

For similar functionalities, consider these alternatives to the APT75GP120J:

  • IRFP460: A power MOSFET transistor with comparable power handling capabilities.
  • IXFK120N20P: This module offers similar high-current and low on-state resistance characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Type Discrete IGBT Package Type(s) SOT-227, T-MAX, TO-247
Power Dissipation (W) [max] 250 - 1042 Collector Current (dc) (A) [max] 20 - 91

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