APT75GP120J
1200V N-Channel IGBT Transistor Module
Inventory:9,472
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : APT75GP120J
-
Package/Case : SOT-227-4
-
Brand : Microchip
-
Components Classification : IGBT Modules
-
Datesheet : APT75GP120J DataSheet (PDF)
The APT75GP120J is a power MOSFET transistor module designed for high-power applications. It features a high current rating and low on-state resistance, making it suitable for power switching and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the APT75GP120J module for a visual representation. Note: For detailed technical specifications, please refer to the APT75GP120J datasheet. Functionality The APT75GP120J is a power MOSFET module designed for high-current and high-power applications. It offers efficient power switching and control capabilities for diverse industrial and automotive applications. Usage Guide Q: Can the APT75GP120J be used for high-frequency applications? Q: Does the APT75GP120J require external heat sinking? For similar functionalities, consider these alternatives to the APT75GP120J:Overview of APT75GP120J
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: While the APT75GP120J offers fast switching speeds, it is primarily designed for high-power applications rather than high-frequency operations.
A: Depending on the application and power levels, external heat sinking may be necessary to maintain optimal operating temperatures.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Type | Discrete IGBT | Package Type(s) | SOT-227, T-MAX, TO-247 |
Power Dissipation (W) [max] | 250 - 1042 | Collector Current (dc) (A) [max] | 20 - 91 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![APT38F80B2](/img/package/to247.jpg)
APT38F80B2
This MOSFET has a low on-resistance of 240mΩ at 20A and 10V gate-source voltage
![DXT790AP5-13](/img/package/power33.jpg)
DXT790AP5-13
Tape and Reel Packaging of General Purpose PNP Bipolar Junction Transistor with 40V Voltage and 3A Current Ratings
![IRFP450APBF](/img/package/to247.jpg)
IRFP450APBF
N-channel MOSFET,IRFP450A 14A 500V
![FDC638APZ](/img/package/sot23.jpg)
FDC638APZ
Trans MOSFET P-CH 20V 4.5A 6-Pin TSOT-23 T/R
![FDC658AP](/files/uploads/product/s/8aa13d2cd2cd42aca77f911da22aef0e.webp)
FDC658AP
Trans MOSFET P-CH 30V 4A 6-Pin TSOT-23 T/R
![BUX98APW](/img/package/to247.jpg)
BUX98APW
24A NPN silicon power transistor
![AP2306AGN](/files/uploads/product/s/8fd503cbc71642b184f29c9c5d89ea2c.webp)
AP2306AGN
Lead-Free Technology
![APT50M50JVFR](/img/package/sot.jpg)
APT50M50JVFR
Four-pin SOT-227 package
![APT94N60L2C3G](/img/package/to-3.jpg)
APT94N60L2C3G
Trans MOSFET N-CH 600V 94A 3-Pin(3+Tab) TO-264 MAX Tube
![APT28M120L](/img/package/to-3.jpg)
APT28M120L
Product APT28M120L is a MOSFET with a voltage rating of 1.2kV and a current rating of 29A
![2SC5006-T1-A](/img/package/sot23.jpg)
2SC5006-T1-A
Silicon NPN RF Bipolar Transistors for Amplification
![DSC500200L](/img/package/sc70.jpg)
DSC500200L
Small-Sized Bipolar Transistor with 0
![BCP53-16T1G](/img/package/sot223.jpg)
BCP53-16T1G
BCP53-16T1G is a member of the BCP Series, featuring a Surface Mount PNP Silicon Epitaxial Transistor capable of handling up to 1
![IXTA140P05T](/img/package/d2pak3.jpg)
IXTA140P05T
Effect Transistor Power
![IRF7401TRPBF](/img/package/so8.jpg)
IRF7401TRPBF
MOSFET transistor with an output power of 2.5W at 4.5V
![IRFR9110PBF](/img/package/dpak2.jpg)
IRFR9110PBF
P-channel MOSFET transistor IRFR9110PBF has a maximum current rating of 3.1 A and a voltage rating of 100 V, housed in a 3-pin D-PAK package
![BSZ123N08NS3GATMA1](/img/package/son8.jpg)
BSZ123N08NS3GATMA1
Product Description: MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
![BSM100GB170DLC](/img/package/module.jpg)
BSM100GB170DLC
N-Channel Insulated Gate Bipolar Transistor with 200A Current Rating and 1700V Voltage Rating, Packaged in Module-7
![IRLR6225PBF](/img/package/to252.jpg)
IRLR6225PBF
MOSFET with 20V voltage rating, 1 N-Channel, HEXFET technology with 4mOhms on-resistance and 48nC total gate charge
![SIR882DP-T1-GE3](/img/package/power33.jpg)
SIR882DP-T1-GE3
This component, with its 8-pin PowerPAK SO package, facilitates efficient switching in various electronic circuits