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VS-GT100DA120UF

Insulated Gate Bipolar Transistor module rated for 1200 volts and 187 amps, delivering 890 watts in SOT227 configuration

Inventory:5,252

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Overview of VS-GT100DA120UF

The VS-GT100DA120UF is a cutting-edge IGBT module that is perfect for high-power applications. With a voltage rating of 1200V and a current rating of 100A, it is well-suited for a variety of industrial and commercial uses. Its advanced construction ensures top-notch efficiency and dependability, making it a reliable choice for demanding environments

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Vishay Product Category IGBT Modules
RoHS Details Product IGBT Silicon Modules
Configuration Single Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage - Continuous Collector Current at 25 C 187 A
Gate-Emitter Leakage Current 220 nA Pd - Power Dissipation 890 W
Package / Case SOT-227-4 Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Brand Vishay Semiconductors
Mounting Style SMD/SMT Product Type IGBT Modules
Factory Pack Quantity 10 Subcategory IGBTs
Technology Si Unit Weight 1.058219 oz
Series HEXFRED® Package Bulk
Product Status Active IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 187 A
Power - Max 890 W Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 100A
Current - Collector Cutoff (Max) 100 µA Input Capacitance (Cies) @ Vce 6.15 nF @ 25 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount
Supplier Device Package SOT-227 Base Product Number GT100

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