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DCG45X1200NA

DCG45X1200NA Diode

Inventory:7,068

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Overview of DCG45X1200NA

Made from SiC material, these diodes are engineered for fast switching applications where minimizing power losses is crucial. With their superior performance characteristics, they are ideal for systems that demand high reliability and increased power density. Whether you are designing power supplies, motor drives, or renewable energy systems, the DCG45X1200NA diodes are sure to meet your requirements

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Active
Diode Configuration 2 Independent Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V Current - Average Rectified (Io) (per Diode) 22A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 20 A Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns Current - Reverse Leakage @ Vr 200 µA @ 1200 V
Operating Temperature - Junction -40°C ~ 175°C Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC Supplier Device Package SOT-227B
Base Product Number DCG45

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