• FF200R33KF2C IHM
FF200R33KF2C IHM

FF200R33KF2C

High-powered dual IGBT modules reaching 3300V and 200A

Quantity Unit Price(USD) Ext. Price
1 $1,142.127 $1,142.13
30 $1,095.812 $32,874.36

Inventory:8,870

*The price is for reference only.
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Overview of FF200R33KF2C

The FF200R33KF2C is a high-power IGBT module designed for high-performance industrial applications.It features a high current and voltage rating,making it suitable for power conversion and motor control applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • Collector
  • Emitter
  • Ga
  • Gc
  • Gc
  • Gc
  • Collector
  • Emitter
  • Ga
  • Gc
  • Gc
  • Gc

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FF200R33KF2C for a visual representation.

Key Features

  • High-Power IGBT Module: Designed for high-power applications requiring efficient power conversion.
  • High Current and Voltage Rating: Capable of handling high currents and voltages for industrial systems.
  • Robust Construction: Built to withstand demanding industrial environments and conditions.
  • High Efficiency: Offers high efficiency in power conversion processes, reducing energy losses.
  • Temperature Stability: Provides stable performance across a wide temperature range for reliable operation.

Note:For detailed technical specifications, please refer to the FF200R33KF2C datasheet.

Application

  • Power Inverters: Ideal for use in power inverters for converting DC power to AC power in industrial settings.
  • Motor Drives: Suitable for motor control applications requiring high-power efficiency and performance.
  • Renewable Energy Systems: Used in renewable energy systems for efficient power conversion and distribution.

Functionality

The FF200R33KF2C is a high-power IGBT module designed for efficient power conversion and control in industrial applications.It offers high reliability and performance for demanding industrial systems.

Usage Guide

  • Power Connections: Properly connect the collector, emitter, and gate terminals based on the application requirements.
  • Heat Management: Ensure proper heat dissipation to maintain temperature stability and optimize performance.
  • Control Signals: Use appropriate control signals to drive the gate terminals for desired switching characteristics.

Frequently Asked Questions

Q:Can the FF200R33KF2C operate at high temperatures?
A:Yes,the FF200R33KF2C is designed to operate reliably at high temperatures,ensuring consistent performance in challenging environments.

Equivalent

For similar functionalities, consider these alternatives to the FF200R33KF2C:

  • FF300R45KF2C: A higher power IGBT module with similar features and performance characteristics.
  • IGBT200A: This IGBT module offers comparable current and voltage ratings to the FF200R33KF2C for industrial applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS N
Configuration Dual Collector- Emitter Voltage VCEO Max 3.3 kV
Collector-Emitter Saturation Voltage 3.4 V Continuous Collector Current at 25 C 330 A
Gate-Emitter Leakage Current 400 nA Pd - Power Dissipation 2.2 kW
Package / Case IHM 73X140-8 Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C Brand Infineon Technologies
Height 38 mm Length 140 mm
Maximum Gate Emitter Voltage 20 V Mounting Style Chassis Mount
Product Type IGBT Modules Series IGBT2
Factory Pack Quantity 4 Subcategory IGBTs
Technology Si Width 73 mm
Part # Aliases SP000100616 FF200R33KF2CNOSA1 Unit Weight 1.102 lbs

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