BSM50GP60
High-power transistor for demanding applications
Inventory:6,298
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Part Number : BSM50GP60
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Package/Case : EconoPIM2
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Brands : INFINEON
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Components Categories : IGBT Modules
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Datesheet : BSM50GP60 DataSheet (PDF)
The BSM50GP60 is a high-power IGBT module designed for use in various power electronic applications. This module combines a high-voltage IGBT with a fast recovery diode, providing efficient switching and power handling capabilities. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSM50GP60 module for a visual representation. Note: For detailed technical specifications, please refer to the BSM50GP60 datasheet. Functionality The BSM50GP60 is designed to handle high-power switching applications with efficiency and reliability. It offers fast switching speed and low saturation voltage, making it suitable for demanding power electronic systems. Usage Guide Q: What is the maximum operating temperature for the BSM50GP60? Q: Can the BSM50GP60 be used in high-frequency applications? For similar functionalities, consider these alternatives to the BSM50GP60:Overview of BSM50GP60
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The BSM50GP60 is designed to operate within a maximum temperature range specified in the datasheet, typically up to 150°C.
A: Yes, the BSM50GP60 offers fast switching speed, making it suitable for high-frequency switching applications in power electronics.Equivalent
![](/files/uploads/product/b/c53226944c6141b3b9e5045b0301ef7d.webp)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Modules | RoHS | N |
Product | IGBT Silicon Modules | Configuration | Hex |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.2 V |
Continuous Collector Current at 25 C | 70 A | Gate-Emitter Leakage Current | 300 nA |
Pd - Power Dissipation | 250 W | Package / Case | EconoPIM2 |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Brand | Infineon Technologies | Height | 17 mm |
Length | 107.5 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 45 mm |
Part # Aliases | SP000100380 BSM50GP60BOSA1 | Unit Weight | 7.770766 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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Parts Quality Guarantee: 365 days
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Returns for Exchange: within 90 days
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