FP7G75US60
This trans IGBT module is designed for demanding rail-to-rail switching operations up to and A current capabilitie
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $86.309 | $86.31 |
200 | $33.402 | $6,680.40 |
500 | $32.228 | $16,114.00 |
1000 | $31.648 | $31,648.00 |
Inventory:8,936
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Part Number : FP7G75US60
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Package/Case : EPM7
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Brands : onsemi
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Components Categories : IGBT Modules
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Datesheet : FP7G75US60 DataSheet (PDF)
The FP7G75US60 is a 600V, 75A Ultrafast Rectifier Diode designed for high-power applications. It features ultrafast recovery times and low forward voltage drop, making it suitable for high-efficiency power conversion systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the FP7G75US60 diode for a visual representation. Note: For detailed technical specifications, please refer to the FP7G75US60 datasheet. Functionality The FP7G75US60 is a high-power ultrafast rectifier diode designed to handle large voltage and current levels with high efficiency. It is a reliable component for power electronics applications. Usage Guide Q: What is the maximum reverse voltage rating of the FP7G75US60? Q: Can the FP7G75US60 be used in high-frequency applications? For similar functionalities, consider these alternatives to the FP7G75US60:Overview of FP7G75US60
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The FP7G75US60 has a maximum reverse voltage rating of 600V.
A: Yes, the ultrafast recovery times of the FP7G75US60 make it suitable for high-frequency switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | onsemi | Product Category | IGBT Modules |
RoHS | Details | Product | IGBT Silicon Modules |
Configuration | Dual | Collector- Emitter Voltage VCEO Max | 600 V |
Continuous Collector Current at 25 C | 75 A | Package / Case | EPM |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Brand | onsemi / Fairchild | Height | 12.2 mm |
Length | 93 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | SMD/SMT | Product Type | IGBT Modules |
Factory Pack Quantity | 5 | Subcategory | IGBTs |
Technology | Si | Width | 38 mm |
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