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FP7G75US60

This trans IGBT module is designed for demanding rail-to-rail switching operations up to and A current capabilitie

Quantity Unit Price(USD) Ext. Price
1 $86.309 $86.31
200 $33.402 $6,680.40
500 $32.228 $16,114.00
1000 $31.648 $31,648.00

Inventory:8,936

*The price is for reference only.
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Overview of FP7G75US60

The FP7G75US60 is a 600V, 75A Ultrafast Rectifier Diode designed for high-power applications. It features ultrafast recovery times and low forward voltage drop, making it suitable for high-efficiency power conversion systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • K: Cathode
  • A: Anode

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FP7G75US60 diode for a visual representation.

Key Features

  • High Voltage and Current Rating: With a voltage rating of 600V and a current rating of 75A, the FP7G75US60 is ideal for high-power applications.
  • Ultrafast Recovery Time: The diode offers ultrafast reverse recovery times, minimizing switching losses in power electronics.
  • Low Forward Voltage Drop: Featuring low forward voltage drop, the FP7G75US60 helps improve overall system efficiency.
  • High Surge Current Capability: This diode can handle high surge currents, providing robust operation in demanding conditions.

Note: For detailed technical specifications, please refer to the FP7G75US60 datasheet.

Application

  • Power Supplies: Suitable for use in power supply units, inverters, and converters.
  • Motor Drives: Ideal for motor drive applications where high-speed switching is required.
  • Solar Inverters: Used in solar inverters for efficient energy conversion.

Functionality

The FP7G75US60 is a high-power ultrafast rectifier diode designed to handle large voltage and current levels with high efficiency. It is a reliable component for power electronics applications.

Usage Guide

  • Mounting: Connect the cathode (K) and anode (A) terminals of the diode in accordance with the circuit requirements.
  • Heat Dissipation: Ensure proper heat sinking to maintain the diode's operating temperature within limits.

Frequently Asked Questions

Q: What is the maximum reverse voltage rating of the FP7G75US60?
A: The FP7G75US60 has a maximum reverse voltage rating of 600V.

Q: Can the FP7G75US60 be used in high-frequency applications?
A: Yes, the ultrafast recovery times of the FP7G75US60 make it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the FP7G75US60:

  • BYV27-75: This is a fast recovery diode with similar voltage and current ratings.
  • IRFHE8330: A high-speed rectifier diode offering comparable performance to the FP7G75US60.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category IGBT Modules
RoHS Details Product IGBT Silicon Modules
Configuration Dual Collector- Emitter Voltage VCEO Max 600 V
Continuous Collector Current at 25 C 75 A Package / Case EPM
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Brand onsemi / Fairchild Height 12.2 mm
Length 93 mm Maximum Gate Emitter Voltage 20 V
Mounting Style SMD/SMT Product Type IGBT Modules
Factory Pack Quantity 5 Subcategory IGBTs
Technology Si Width 38 mm

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