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STGE200NB60S

Trans IGBT Module N-CH 600V 200A 600W 4-Pin ISOTOP Tube

Inventory:9,242

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Overview of STGE200NB60S

With the STGE200NB60S, STMicroelectronics has surpassed industry standards by designing an IGBT that leverages high voltage technology and a patented strip layout. The result is a family of PowerMESH™ IGBTs that deliver exceptional performance, particularly in achieving remarkably low VCE(sat) at a maximum frequency of 1KHz. This optimization, indicated by the "S" suffix, signifies a product that is ideal for applications demanding superior efficiency and minimal power wastage

Key Features

  • High reliability and durability
  • Wide operating temperature range
  • No noise immunity required
  • Low leakage current

Application

  • Motor Drive & Control
  • Motor Drive & Control
  • Power Management

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer STMicroelectronics Product Category IGBT Modules
RoHS Details Configuration Single Dual Emitter
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.2 V
Continuous Collector Current at 25 C 200 A Gate-Emitter Leakage Current 100 nA
Pd - Power Dissipation 600 W Package / Case ISOTOP-4
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Brand STMicroelectronics Height 9.1 mm
Length 38.2 mm Maximum Gate Emitter Voltage 20 V
Mounting Style Through Hole Product Type IGBT Modules
Series STGE200NB60S Factory Pack Quantity 100
Subcategory IGBTs Tradename PowerMESH
Width 25.5 mm Unit Weight 1 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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