• SIHG20N50C-E3 TO247-3
SIHG20N50C-E3 TO247-3

SIHG20N50C-E3

MOSFET 500V Vds 30V Vgs TO-247AC

Quantity Unit Price(USD) Ext. Price
1 $1.187 $1.19
10 $1.083 $10.83
25 $0.995 $24.88
100 $0.926 $92.60
500 $0.897 $448.50
1000 $0.882 $882.00

Inventory:4,407

*The price is for reference only.
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Please submit RFQ for SIHG20N50C-E3 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of SIHG20N50C-E3

N-Channel 500 V 20A (Tc) 250W (Tc) Through Hole TO-247AC

SIHG20N50C-E3

Key Features

  • Low figure-of-merit Ron x Qg
  • 100 % avalanche tested
  • High peak current capability
  • dv/dt ruggedness
  • Improved Trr/Qrr
  • Improved gate charge
  • High power dissipations capability
  • Application

    • Power Management

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    REACH Details Technology Si
    Mounting Style Through Hole Package / Case TO-247-3
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 20 A
    Rds On - Drain-Source Resistance 270 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
    Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 65 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Pd - Power Dissipation 250 mW Channel Mode Enhancement
    Brand Vishay / Siliconix Configuration Single
    Fall Time 44 ns Forward Transconductance - Min 6.4 S
    Height 20.82 mm Length 15.87 mm
    Product Type MOSFET Rise Time 27 ns
    Factory Pack Quantity 500 Subcategory MOSFETs
    Transistor Type 1 N-Channel Typical Turn-Off Delay Time 32 ns
    Typical Turn-On Delay Time 80 ns Width 5.31 mm
    Unit Weight 0.211644 oz

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