SI2365EDS-T1-GE3
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Part Number : SI2365EDS-T1-GE3
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Package/Case : SOT-23-3
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : SI2365EDS-T1-GE3 DataSheet (PDF)
The SI2365EDS-T1-GE3 is a P-channel MOSFET transistor with a compact and efficient design, suitable for a wide range of electronic applications.This transistor is engineered to provide high performance in power management circuits and switching applications. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI2365EDS-T1-GE3 MOSFET for a visual representation. Note:For detailed technical specifications,please refer to the SI2365EDS-T1-GE3 datasheet. Functionality The SI2365EDS-T1-GE3 is a high-performance P-channel MOSFET transistor designed for power management and switching applications.It offers reliable and efficient operation in various electronic circuits. Usage Guide Q:Can the SI2365EDS-T1-GE3 handle high currents? For similar functionalities,consider these alternatives to the SI2365EDS-T1-GE3:Overview of SI2365EDS-T1-GE3
Pinout
Circuit DiagramKey Features
Application
Frequently Asked Questions
A:Yes,the SI2365EDS-T1-GE3 is designed to handle high currents with its low on-resistance and overcurrent protection.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 5.9 A | Rds On - Drain-Source Resistance | 26.5 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 13.8 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 14 ns |
Height | 1.45 mm | Length | 2.9 mm |
Product Type | MOSFET | Rise Time | 21 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 62 ns |
Typical Turn-On Delay Time | 22 ns | Width | 1.6 mm |
Part # Aliases | SI2365EDS-T1-BE3 SI4816DY-T1-E3-S | Unit Weight | 0.000282 oz |
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