• SI2337DS-T1-E3 SOT-23-3
SI2337DS-T1-E3 SOT-23-3

SI2337DS-T1-E3

P-channel MOSFET

Quantity Unit Price(USD) Ext. Price
1 $0.467 $0.47
10 $0.415 $4.15
30 $0.389 $11.67
100 $0.363 $36.30
500 $0.323 $161.50
1000 $0.315 $315.00

Inventory:7,542

*The price is for reference only.
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Overview of SI2337DS-T1-E3

The SI2337DS-T1-E3 is an N-channel MOSFET transistor designed for use in various electronic applications. This MOSFET features a high power handling capability and low on-state resistance, making it suitable for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal
  • D: Drain terminal
  • S: Source terminal
  • S: Source terminal
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2337DS-T1-E3 MOSFET for a visual representation.

Key Features

  • High Power Handling: The SI2337DS-T1-E3 can handle high power levels, making it suitable for power applications.
  • Low On-State Resistance: This MOSFET has a low on-state resistance, resulting in minimal power losses during operation.
  • Fast Switching Speed: With its fast switching characteristics, it allows for quick switching in electronic circuits.
  • High Input Impedance: The gate of the MOSFET features high input impedance, enabling easy interfacing with control circuits.
  • Temperature Stability: The SI2337DS-T1-E3 exhibits good temperature stability, ensuring reliable performance across a range of operating conditions.

Note: For detailed technical specifications, please refer to the SI2337DS-T1-E3 datasheet.

Application

  • Power Management: Ideal for power management circuits in various electronic devices.
  • Switching Circuits: Suitable for use in switching circuits for controlling power flow.
  • Motor Control: Can be utilized in motor control applications for efficient power handling.

Functionality

The SI2337DS-T1-E3 MOSFET is a high-power N-channel transistor that provides efficient power management and switching capabilities in electronic circuits. It offers low on-state resistance and fast switching speeds, making it a reliable component for diverse applications.

Usage Guide

  • Gate Voltage: Apply the appropriate voltage level to the gate terminal for controlling the MOSFET's switching behavior.
  • Drain-Source Connection: Connect the load or power supply between the drain and source terminals for current flow control.

Frequently Asked Questions

Q: Is the SI2337DS-T1-E3 suitable for high-frequency applications?
A: While the SI2337DS-T1-E3 offers fast switching speeds, it is recommended to check the datasheet for specific frequency limitations.

Equivalent

For similar functionalities, consider these alternatives to the SI2337DS-T1-E3:

  • SI2322DS-T1-GE3: An alternative N-channel MOSFET with comparable power handling and switching characteristics.
  • SI2317CDS-T1-GE3: This MOSFET offers similar performance to the SI2337DS-T1-E3 and may be suitable for your application.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 2.2 A Rds On - Drain-Source Resistance 270 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 17 nC Minimum Operating Temperature - 50 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 12 ns
Forward Transconductance - Min 4.3 S Height 1.45 mm
Length 2.9 mm Product Type MOSFET
Rise Time 15 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 10 ns
Width 1.6 mm Part # Aliases SI2337DS-T1-BE3 SI2337DS-E3
Unit Weight 0.000282 oz

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