• SI4214DDY-T1-GE3 8-SOIC
SI4214DDY-T1-GE3 8-SOIC

SI4214DDY-T1-GE3

SI4214DDY-T1-GE3, Dual N-channel MOSFET Transistor 7.5A 30V, 8-Pin SOIC

Inventory:6,496

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Overview of SI4214DDY-T1-GE3

MOSFET, DUAL N-CH, 30V, 8.5A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

SI4214DDY-T1-GE3

Key Features

  • TrenchFET® power MOSFET
  • Typical ESD protection 1500 V in HBM
  • 100 % Rg tested

    • Application

    ["Notebook System Power ", "Low Current DC/DC"]

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Pbfree Code Yes Rohs Code Yes
    Part Life Cycle Code Transferred Ihs Manufacturer VISHAY SILICONIX
    Part Package Code SOT Package Description SMALL OUTLINE, R-PDSO-G8
    Pin Count 8 Reach Compliance Code
    ECCN Code EAR99 Samacsys Manufacturer Vishay
    Avalanche Energy Rating (Eas) 5 mJ Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 8.5 A
    Drain-source On Resistance-Max 0.0195 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
    Feedback Cap-Max (Crss) 86 pF JEDEC-95 Code MS-012AA
    JESD-30 Code R-PDSO-G8 Moisture Sensitivity Level 1
    Number of Elements 2 Number of Terminals 8
    Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
    Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
    Package Shape RECTANGULAR Package Style SMALL OUTLINE
    Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 3.1 W
    Pulsed Drain Current-Max (IDM) 30 A Qualification Status Not Qualified
    Surface Mount YES Terminal Finish PURE MATTE TIN
    Terminal Form GULL WING Terminal Position DUAL
    Transistor Application SWITCHING Transistor Element Material SILICON
    Turn-off Time-Max (toff) 108 ns Turn-on Time-Max (ton) 59 ns

    Warranty & Returns

    Warranty, Returns, and Additional Information

    • QA & Return Policy

      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

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