SI2347DS-T1-GE3
SOT23-packaged P-MOSFET transistor with unipolar operation
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.133 | $0.66 |
50 | $0.117 | $5.85 |
150 | $0.109 | $16.35 |
500 | $0.091 | $45.50 |
3000 | $0.087 | $261.00 |
6000 | $0.084 | $504.00 |
Inventory:7,645
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Part Number : SI2347DS-T1-GE3
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Package/Case : SOT-23-3
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Brands : VISHAY
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Components Categories : Single FETs, MOSFETs
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Datesheet : SI2347DS-T1-GE3 DataSheet (PDF)
The SI2347DS-T1-GE3 is a dual N-channel MOSFET transistor designed for use in power management applications. This transistor features a low ON-resistance and high current-handling capability, making it suitable for various high-power electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI2347DS-T1-GE3 for a visual representation. Note: For detailed technical specifications, please refer to the SI2347DS-T1-GE3 datasheet. Functionality The SI2347DS-T1-GE3 is a dual N-channel MOSFET transistor that provides efficient power management capabilities by controlling current flow and voltage levels in electronic circuits. Usage Guide Q: Is the SI2347DS-T1-GE3 suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the SI2347DS-T1-GE3:Overview of SI2347DS-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SI2347DS-T1-GE3 features fast switching speeds, making it suitable for high-frequency switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 5 A | Rds On - Drain-Source Resistance | 33 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 6.9 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 9 ns |
Height | 1.45 mm | Length | 2.9 mm |
Product Type | MOSFET | Rise Time | 6 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 6 ns | Width | 1.6 mm |
Part # Aliases | SI2347DS-T1-BE3 | Unit Weight | 0.000282 oz |
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Warranty, Returns, and Additional Information
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