SI2371EDS-T1-GE3
MOSFET -30V Vds 12V Vgs SOT-23
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Part Number : SI2371EDS-T1-GE3
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Package/Case : SOT23-3
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : SI2371EDS-T1-GE3 DataSheet (PDF)
The SI2371EDS-T1-GE3 is a P-channel enhancement mode field-effect transistor (FET) designed for power management applications in electronic circuits. This transistor offers low on-state resistance and high current-carrying capability, making it suitable for various power switching and amplification tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI2371EDS-T1-GE3 FET for a visual representation. Note: For detailed technical specifications, please refer to the SI2371EDS-T1-GE3 datasheet. Functionality The SI2371EDS-T1-GE3 is a P-channel FET that enables effective power management in various electronic systems. It provides reliable power switching and amplification capabilities for enhanced circuit performance. Usage Guide Q: Is the SI2371EDS-T1-GE3 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the SI2371EDS-T1-GE3:Overview of SI2371EDS-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SI2371EDS-T1-GE3 offers fast switching speeds, making it suitable for high-frequency operations.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 4.8 A | Rds On - Drain-Source Resistance | 45 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 10.6 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.7 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 52 ns |
Product Type | MOSFET | Rise Time | 8 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 52 ns |
Typical Turn-On Delay Time | 28 ns | Part # Aliases | SI2371EDS-T1-BE3 |
Unit Weight | 0.000282 oz |
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