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IRFD9014PBF

Trans MOSFET P-CH 60V 1.1A 4-Pin HVMDIP

Inventory:5,491

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Overview of IRFD9014PBF

MOSFET, P, DIL; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 1.3W; Transistor Case Style: DIP; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: -1.1A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 2.54mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pin Format: 4; Pulse Current Idm: 8.8A; Row Pitch: 7.62mm; Voltage Vds Typ: -60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: -10V

Key Features

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • For automatic Insertion
  • End stackable
  • P-channel
  • 175 °C operating temperature
  • Fast switching

    • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    Technology Si Mounting Style Through Hole
    Package / Case DIP-4 Transistor Polarity P-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
    Id - Continuous Drain Current 1.1 A Rds On - Drain-Source Resistance 500 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
    Qg - Gate Charge 12 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 175 C Pd - Power Dissipation 1.3 W
    Channel Mode Enhancement Series IRFD
    Brand Vishay / Siliconix Configuration Single
    Height 3.37 mm Length 6.29 mm
    Product Type MOSFET Factory Pack Quantity 2500
    Subcategory MOSFETs Width 5 mm
    Unit Weight 0.031537 oz

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