• IRFI840GPBF TO-220-3
IRFI840GPBF TO-220-3

IRFI840GPBF

This MOSFET is packaged in a TO-220F-3 form factor and is compliant with the ROHS directive

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Overview of IRFI840GPBF

The IRFI840GPBF is a power MOSFET transistor designed for high power applications. It is a P-channel device with a drain-source breakdown voltage of -500V and a continuous drain current of -8.0A. The IRFI840GPBF features a low on-state resistance of 1.8 ohms and a fast switching speed, making it suitable for use in power management systems, motor control, and other high-power applications.This MOSFET transistor is housed in a TO-220AB package, which offers high thermal efficiency and easy mounting on a heatsink. The IRFI840GPBF also features a low gate charge and a high gate-source voltage rating, making it easy to drive with standard signal levels.

Key Features

  • IRFI840GPBF is a N-channel power MOSFET with a voltage rating of 500V and a continuous drain current of 8
  • 4A
  • It has a low on-resistance of 0
  • 84 ohms and is suitable for high power applications
  • The MOSFET is housed in TO-220 packaging and has a gate threshold voltage of 2-4V, making it compatible with a wide range of control circuits

    • Application

  • The IRFI840GPBF is a power MOSFET transistor commonly used in a variety of applications including power supplies, motor controls, and lighting systems
  • It is also used in industrial automation, welding equipment, and power factor correction circuits
  • Its high power handling capabilities and efficiency make it suitable for high voltage and high current applications

    • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    REACH Details Technology Si
    Mounting Style Through Hole Package / Case TO-220-3
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 4.6 A
    Rds On - Drain-Source Resistance 850 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
    Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 67 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Pd - Power Dissipation 40 W Channel Mode Enhancement
    Series IRFI Brand Vishay Semiconductors
    Configuration Single Fall Time 21 ns
    Forward Transconductance - Min 3.7 S Product Type MOSFET
    Rise Time 22 ns Factory Pack Quantity 1000
    Subcategory MOSFETs Transistor Type 1 N-Channel
    Typical Turn-Off Delay Time 55 ns Typical Turn-On Delay Time 14 ns
    Unit Weight 0.068784 oz

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