• IRFP264PBF TO-247-3
IRFP264PBF TO-247-3

IRFP264PBF

Siliconix through-hole MOSFET

Quantity Unit Price(USD) Ext. Price
1 $1.724 $1.72
10 $1.582 $15.82
25 $1.350 $33.75
100 $1.259 $125.90
500 $1.219 $609.50
1000 $1.201 $1,201.00

Inventory:8,273

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for IRFP264PBF or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IRFP264PBF

The IRFP264PBF is a power MOSFET transistor designed for high-power switching applications. It features a low on-state resistance and high switching speed, making it suitable for power converters, motor control, and other high-current applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFP264PBF MOSFET for a visual representation.

Key Features

  • High Power Handling: The IRFP264PBF can handle high power levels, suitable for demanding applications.
  • Low On-State Resistance: The low RDS(on) ensures minimal power loss and high efficiency in power switching.
  • Fast Switching Speed: With high-speed switching capability, this MOSFET enables quick transitions in power circuits.
  • Enhanced Thermal Performance: The package design allows for efficient heat dissipation, improving reliability.

Note: For detailed technical specifications, please refer to the IRFP264PBF datasheet.

Application

  • Power Converters: Ideal for use in power converters for efficient energy conversion.
  • Motor Control: Suitable for motor control applications requiring high-power handling.
  • Switching Circuits: Used in high-current switching circuits for fast and reliable operation.

Functionality

The IRFP264PBF is a power MOSFET transistor that excels in high-power switching scenarios, offering low resistance and fast switching speed for efficient performance in various applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the driving circuit for controlling the MOSFET.
  • Drain and Source: Connect the load between the drain (D) and source (S) pins for power switching operations.
  • Heat Management: Ensure proper heat sinking to maintain optimal operating temperatures during high-power operation.

Frequently Asked Questions

Q: What is the maximum power handling capacity of the IRFP264PBF?
A: The IRFP264PBF can handle power levels up to X watts, based on operating conditions and thermal management.

Q: Is the IRFP264PBF suitable for high-frequency switching applications?
A: The IRFP264PBF is optimized for high-power applications with moderate switching frequencies. For high-frequency operations, consider MOSFETs specifically designed for fast switching.

Equivalent

For similar functionalities, consider these alternatives to the IRFP264PBF:

  • IRF3205: A power MOSFET with comparable performance characteristics suitable for high-power applications.
  • IRF1404: This MOSFET offers efficient power handling and switching speed similar to the IRFP264PBF.

IRFP264PBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 250 V Id - Continuous Drain Current 38 A
Rds On - Drain-Source Resistance 75 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 210 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 280 W Channel Mode Enhancement
Series IRFP Brand Vishay Semiconductors
Configuration Single Fall Time 92 ns
Forward Transconductance - Min 20 S Product Type MOSFET
Rise Time 99 ns Factory Pack Quantity 500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 110 ns Typical Turn-On Delay Time 22 ns
Unit Weight 0.211644 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

IRFS9N60APBF

IRFS9N60APBF

Power Field-Effect Transistor
IRFP460PBF

IRFP460PBF

N-channel MOSFET,IRFP460 20A 500V
IRFP460LCPBF

IRFP460LCPBF

The IRFP460LCPBF is a TO-247AC-3 package MOSFET that complies with RoHS regulations
IRFI840GPBF

IRFI840GPBF

This MOSFET is packaged in a TO-220F-3 form factor and is compliant with the ROHS directive
IRFB18N50KPBF

IRFB18N50KPBF

TO-220 package MOSFET with 220W power dissipation capability
IRF740PBF

IRF740PBF

Operating temperature range from -55 to +150 degrees Celsius, suitable for a variety of applications
IRF830

IRF830

Trans MOSFET N-CH Si 500V 4.5A 3-Pin(3+Tab) TO-220AB
IRFU014PBF

IRFU014PBF

Trans MOSFET N-CH 60V 7.7A 3-Pin(3+Tab) IPAK