• IRF740PBF TO-220-3
IRF740PBF TO-220-3

IRF740PBF

Operating temperature range from -55 to +150 degrees Celsius, suitable for a variety of applications

Quantity Unit Price(USD) Ext. Price
1 $0.508 $0.51
10 $0.421 $4.21
50 $0.342 $17.10
100 $0.300 $30.00
500 $0.274 $137.00
1000 $0.259 $259.00

Inventory:7,366

*The price is for reference only.
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Overview of IRF740PBF

The IRF740PBF is a power MOSFET transistor designed for high-power applications. This N-channel transistor features a low on-resistance and high drain current, making it suitable for switching and amplification circuits that require high continuous current.

Pinout

(Note: The pin configuration below is a general representation. Please refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and usage of the IRF740PBF MOSFET for a better understanding of its application.

Key Features

  • High Drain Current: The IRF740PBF can handle high continuous drain currents, making it suitable for power applications.
  • Low On-Resistance: This MOSFET transistor has a low on-resistance, resulting in minimal power loss and heat generation.
  • Fast Switching Speed: With its high-performance design, the IRF740PBF offers fast switching speeds for efficient operation.
  • Reliable Performance: Designed for high reliability and performance in demanding circuit applications.

Note: For detailed technical specifications, please refer to the IRF740PBF datasheet.

Application

  • Power Amplification: Ideal for use in power amplification circuits for audio or RF applications.
  • Switching Circuits: Suitable for switching applications where high current and low on-resistance are required.
  • Motor Control: Used in motor control circuits for controlling the speed and direction of motors.

Functionality

The IRF740PBF MOSFET transistor provides high current handling capabilities and low on-resistance, enabling efficient power control and amplification in various electronic circuits.

Usage Guide

  • Pin Connections: Connect the Gate (G), Drain (D), and Source (S) pins as per the circuit requirements.
  • Operating Conditions: Ensure the operating voltage and current do not exceed the specified limits to prevent damage to the transistor.
  • Heat Management: Consider proper heat sinking measures to dissipate any heat generated during operation.

Frequently Asked Questions

Q: Is the IRF740PBF suitable for high-frequency applications?
A: While the IRF740PBF offers fast switching speeds, it is more commonly used in applications that do not require high-frequency operation.

Equivalent

For alternative power MOSFET options, consider the following:

  • IRFP260N: A power MOSFET with similar characteristics to the IRF740PBF but higher current handling capacity.
  • IRF830: This MOSFET transistor offers comparable performance to the IRF740PBF and is widely used in power applications.

IRF740PBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 400 V Id - Continuous Drain Current 10 A
Rds On - Drain-Source Resistance 550 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 63 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 125 W Channel Mode Enhancement
Series IRF Brand Vishay Semiconductors
Configuration Single Fall Time 24 ns
Height 15.49 mm Length 10.41 mm
Product Type MOSFET Rise Time 27 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 50 ns
Typical Turn-On Delay Time 14 ns Width 4.7 mm
Part # Aliases IRF740PBF-BE3 SIHF740-E3 Unit Weight 0.068784 oz

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