• IRF830 TO-220-3
IRF830 TO-220-3

IRF830

Trans MOSFET N-CH Si 500V 4.5A 3-Pin(3+Tab) TO-220AB

Quantity Unit Price(USD) Ext. Price
1 $0.267 $0.27
10 $0.215 $2.15
50 $0.192 $9.60
100 $0.165 $16.50
500 $0.152 $76.00
1000 $0.144 $144.00

Inventory:6,776

*The price is for reference only.
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  • Part Number : IRF830

  • Package/Case : TO-220-3

  • Brands : VISHAY

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : IRF830 DataSheet (PDF)

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Overview of IRF830

The IRF830 is an N-channel power MOSFET designed for high power switching applications. This MOSFET features a low on-state resistance and high switching speed, making it suitable for power supplies, motor control, and inverters.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VDD: Drain Voltage

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF830 MOSFET for a visual representation.

Key Features

  • High Power Handling: The IRF830 can handle high power levels, making it suitable for power applications.
  • Low On-State Resistance: This MOSFET offers low on-state resistance for efficient power switching.
  • Fast Switching Speed: With high-speed switching capabilities, the IRF830 is ideal for applications requiring rapid switching.
  • Enhanced Thermal Performance: The MOSFET is designed to dissipate heat effectively, ensuring reliable operation under high load conditions.

Note: For detailed technical specifications, please refer to the IRF830 datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits for efficient power switching.
  • Motor Control: Suitable for motor control applications requiring high power handling.
  • Inverters: Used in inverter circuits for DC to AC power conversion.

Functionality

The IRF830 is a high-power N-channel MOSFET that can efficiently switch large electrical loads, making it an essential component in various power-related applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pin for switching the MOSFET.
  • Drain Connection: Connect the load to the drain pin for power switching operations.
  • Source Connection: Ground the source pin for proper MOSFET operation.

Frequently Asked Questions

Q: What is the maximum current rating of the IRF830?
A: The IRF830 has a maximum continuous drain current rating specified in the datasheet.

Q: Can the IRF830 be used in high-frequency applications?
A: The IRF830 has a specified switching frequency range, ensuring reliability in high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the IRF830:

  • IRF840: An N-channel MOSFET with similar power handling capabilities and electrical characteristics.
  • IRF3205: This MOSFET provides comparable performance to the IRF830 and is suitable for high-power applications.

IRF830

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 4.5 A
Rds On - Drain-Source Resistance 1.5 Ohms Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 75 W Channel Mode Enhancement
Series IRF830 Brand onsemi / Fairchild
Configuration Single Fall Time 16 ns
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 15 ns
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 33 ns Typical Turn-On Delay Time 10 ns
Width 4.7 mm Unit Weight 0.068784 oz

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