• IRFP460PBF TO-247-3
IRFP460PBF TO-247-3

IRFP460PBF

N-channel MOSFET,IRFP460 20A 500V

Quantity Unit Price(USD) Ext. Price
1 $1.547 $1.55
10 $1.347 $13.47
30 $0.957 $28.71
90 $0.834 $75.06
510 $0.781 $398.31
1020 $0.755 $770.10

Inventory:7,082

*The price is for reference only.
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Overview of IRFP460PBF

The IRFP460PBF is a power MOSFET transistor designed for high-performance switching applications. With its low on-state resistance and high switching speed, this transistor is ideal for use in power supplies, motor control, and audio amplifiers.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the IRFP460PBF MOSFET for a more visual representation.

Key Features

  • High Power Handling: The IRFP460PBF can handle high power levels, making it suitable for demanding applications.
  • Low On-State Resistance: With its low RDS(on), this MOSFET minimizes power losses and improves efficiency.
  • High Switching Speed: The fast switching characteristics of the IRFP460PBF enable efficient power conversion.
  • Enhanced Thermal Performance: Designed for efficient heat dissipation, this MOSFET ensures reliable operation under high load conditions.
  • Robust Construction: The IRFP460PBF features a rugged design, providing durability and reliability in harsh environments.

Note: For detailed technical specifications, please refer to the IRFP460PBF datasheet.

Application

  • Switching Power Supplies: The IRFP460PBF is commonly used in high-power switching power supply applications.
  • Motor Control: This MOSFET transistor is suitable for controlling motors in industrial and automotive applications.
  • Audio Amplifiers: Due to its high power handling capability, the IRFP460PBF is used in audio amplifier circuits for efficient power delivery.

Functionality

The IRFP460PBF is a power MOSFET transistor designed for high-performance switching applications. It offers low on-state resistance and high switching speed, making it ideal for various power electronics applications.

Usage Guide

  • Gate Drive: Apply the appropriate gate voltage to turn the MOSFET on and off.
  • Load Connection: Connect the load between the drain and the power supply, ensuring proper current flow through the MOSFET.
  • Heat Management: Implement adequate heat sinking and thermal management measures to ensure reliable operation under high load conditions.

Frequently Asked Questions

Q: Is the IRFP460PBF suitable for high-frequency switching applications?
A: Yes, the IRFP460PBF features high-speed switching characteristics, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IRFP460PBF:

  • IRF540N: A power MOSFET transistor with comparable performance characteristics to the IRFP460PBF.
  • IRFB4227PBF: This MOSFET transistor offers similar power handling capabilities and switching characteristics to the IRFP460PBF.
  • IRFP460NPBF: An enhanced version of the IRFP460PBF with improved thermal performance and reliability.

IRFP460PBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 20 A
Rds On - Drain-Source Resistance 270 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 210 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 280 W Channel Mode Enhancement
Series IRFP Brand Vishay Semiconductors
Configuration Single Fall Time 58 ns
Forward Transconductance - Min 13 S Product Type MOSFET
Rise Time 59 ns Factory Pack Quantity 500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 110 ns Typical Turn-On Delay Time 18 ns
Unit Weight 0.211644 oz

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