• IRFD123PBF 4-HVMDIP
IRFD123PBF 4-HVMDIP

IRFD123PBF

VISHAY - IRFD123PBF - N CHANNEL MOSFET, 100V, 1.3A

Inventory:4,668

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for IRFD123PBF or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IRFD123PBF

N-Channel 100 V 1.3A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

IRFD123PBF

Key Features

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • For automatic insertion
  • End stackable
  • 175 °C operating temperature
  • Fast switching
  • Ease of paralleling

    • Application

    SWITCHING

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Vishay Siliconix
    Series - Package Bulk
    Product Status Active FET Type N-Channel
    Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
    Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V FET Feature -
    Power Dissipation (Max) 1.3W (Ta) Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole Supplier Device Package 4-HVMDIP
    Package / Case 4-DIP (0.300", 7.62mm) Base Product Number IRFD123
    Manufacturer Vishay Product Category MOSFET
    RoHS Details Mounting Style Through Hole
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 1.3 A
    Rds On - Drain-Source Resistance 270 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
    Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 16 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
    Pd - Power Dissipation 1.3 W Channel Mode Enhancement
    Brand Vishay Semiconductors Configuration Single
    Product Type MOSFET Factory Pack Quantity 2500
    Subcategory MOSFETs Unit Weight 0.064234 oz

    Warranty & Returns

    Warranty, Returns, and Additional Information

    • QA & Return Policy

      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

    • Shipping and Package

      Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

      Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

    • Payment

      For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

      If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

    Similar Product

    IRFS9N60APBF

    IRFS9N60APBF

    Power Field-Effect Transistor
    IRFP460PBF

    IRFP460PBF

    N-channel MOSFET,IRFP460 20A 500V
    IRFP460LCPBF

    IRFP460LCPBF

    The IRFP460LCPBF is a TO-247AC-3 package MOSFET that complies with RoHS regulations
    IRFP264PBF

    IRFP264PBF

    Siliconix through-hole MOSFET
    IRFI840GPBF

    IRFI840GPBF

    This MOSFET is packaged in a TO-220F-3 form factor and is compliant with the ROHS directive
    IRFB18N50KPBF

    IRFB18N50KPBF

    TO-220 package MOSFET with 220W power dissipation capability
    IRF740PBF

    IRF740PBF

    Operating temperature range from -55 to +150 degrees Celsius, suitable for a variety of applications
    IRF830

    IRF830

    Trans MOSFET N-CH Si 500V 4.5A 3-Pin(3+Tab) TO-220AB