• IRFBC30APBF
IRFBC30APBF

IRFBC30APBF

Trans MOSFET N-CH 600V 3.6A

Quantity Unit Price(USD) Ext. Price
1 $1.242 $1.24
10 $1.038 $10.38
50 $0.924 $46.20
100 $0.798 $79.80
500 $0.743 $371.50
1000 $0.716 $716.00

Inventory:3,993

*The price is for reference only.
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Overview of IRFBC30APBF

N-Channel 600 V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB

IRFBC30APBF

Key Features

  • Low gate charge Qg results in simple drive requirement
  • Improved gate, avalanche, and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche voltage and current
  • Effective Coss specified
  • Application

    ["Switch Mode Power Supply (SMPS) ", "Uninterruptable Power Supply ", "High Speed Power Switching"]

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Vishay Siliconix
    Series - Package Tube
    Product Status Active FET Type N-Channel
    Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V Vgs (Max) ±30V
    Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V FET Feature -
    Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Through Hole Supplier Device Package TO-220AB
    Package / Case TO-220-3 Base Product Number IRFBC30

    Warranty & Returns

    Warranty, Returns, and Additional Information

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      Returns for refund: within 90 days

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