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IPW90R1K0C3

Trans MOSFET N-CH 900V 5.7A 3-Pin(3+Tab) TO-247 Tube

Quantity Unit Price(USD) Ext. Price
1 $2.477 $2.48
10 $2.142 $21.42
30 $1.932 $57.96
100 $1.719 $171.90
500 $1.621 $810.50
1000 $1.580 $1,580.00

Inventory:7,561

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for IPW90R1K0C3 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IPW90R1K0C3

N-Channel 900 V 5.7A (Tc) 89W (Tc) Through Hole PG-TO247-3-1

Key Features

  • Lowest figure-of-merit RON x Qg
  • Extreme dv/dt rated
  • High peak current capability
  • Qualified according to JEDEC1) for target applications
  • Pb-free lead plating; RoHS compliant
  • Ultra low gate charge

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-247AD Package Description GREEN, PLASTIC, TO-247, 3 PIN
Pin Count 3 Reach Compliance Code
Avalanche Energy Rating (Eas) 97 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V Drain Current-Max (ID) 5.7 A
Drain-source On Resistance-Max 1 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 12 A Qualification Status COMMERCIAL
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON Manufacturer Infineon
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-247-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 900 V
Id - Continuous Drain Current 5.7 A Rds On - Drain-Source Resistance 1 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 89 W
Channel Mode Enhancement Tradename CoolMOS
Series CoolMOS C3 Brand Infineon Technologies
Fall Time 35 ns Height 21.1 mm
Length 16.13 mm Product Type MOSFET
Rise Time 20 ns Factory Pack Quantity 240
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 400 ns Typical Turn-On Delay Time 70 ns
Width 5.21 mm Part # Aliases IPW9R1KC3XK SP000413752 IPW90R1K0C3FKSA1
Unit Weight 0.211644 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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