IPB027N10N5
MOSFET TRENCH >=100V
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $4.315 | $4.32 |
10 | $3.767 | $37.67 |
30 | $3.443 | $103.29 |
100 | $3.114 | $311.40 |
500 | $2.963 | $1,481.50 |
1000 | $2.895 | $2,895.00 |
Inventory:4,912
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Part Number : IPB027N10N5
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Package/Case : TO-263-3
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Brands : INFINEON
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Components Categories : Power Field-Effect Transistors
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Datesheet : IPB027N10N5 DataSheet (PDF)
Overview of IPB027N10N5
OptiMOS™ 5 100V power MOSFET IPB027N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
Key Features
- Ideal for high frequency switching and sync. rec.
- Excellent gate charge x RDS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS compliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | IPB027N10N5 | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
Package Description | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Samacsys Manufacturer | Infineon |
Avalanche Energy Rating (Eas) | 461 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 120 A | Drain-source On Resistance-Max | 0.0027 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 480 A | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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