IPB048N15N5LFATMA1

Name: IPB048N15N5LFATMA1
Brand: INFINEON
Rating: 4.5 (10 reviews)

Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) D2PAK T/R

Inventory:5,327

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Part Number : IPB048N15N5LFATMA1
Package/Case : PG-TO263-3
Brands : INFINEON
Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
Datesheet : IPB048N15N5LFATMA1 DataSheet (PDF)

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Overview of IPB048N15N5LFATMA1

OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management

Key Features

Ideal for hot-swap and e-fuse applications
Very low on-resistance RDS(on)
Wide safe operating area SOA
N-channel; Normal level
100% Avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Halogen-free according to IEC61249-2-21

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	Yes	Part Life Cycle Code	Active
Ihs Manufacturer	INFINEON TECHNOLOGIES AG	Package Description	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	53 Weeks, 1 Day	Samacsys Manufacturer	Infineon
Avalanche Energy Rating (Eas)	30 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (Abs) (ID)	120 A	Drain Current-Max (ID)	120 A
Drain-source On Resistance-Max	0.0048 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	23 pF	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Package Body Material	PLASTIC/EPOXY	Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	313 W
Pulsed Drain Current-Max (IDM)	480 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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