• IPB180P04P4L-02 TO-263-7
IPB180P04P4L-02 TO-263-7

IPB180P04P4L-02

Infineon IPB180P04P4L-02 P-channel MOSFET Transistor, 180 A, 40 V, 7+Tab-Pin TO-263-7-3

Quantity Unit Price(USD) Ext. Price
1 $13.041 $13.04
10 $12.086 $120.86
30 $11.219 $336.57
100 $10.463 $1,046.30

Inventory:4,517

*The price is for reference only.
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Please submit RFQ for IPB180P04P4L-02 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IPB180P04P4L-02

Power Field-Effect Transistor, 180A I(D), 40V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7

IPB180P04P4L-02

Key Features

  • For fast switching converters and sync. rectification
  • N-channel enhancement - logic level
  • 175 °C operating temperature
  • Avalanche rated
  • Pb-free lead plating, RoHS compliant

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IPB180P04P4L-02 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-263
Package Description SMALL OUTLINE, R-PSSO-G6 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 84 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 40 V
Drain Current-Max (Abs) (ID) 180 A Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0039 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263 JESD-30 Code R-PSSO-G6
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 225 Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 150 W Pulsed Drain Current-Max (IDM) 720 A
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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