IPT015N10N5
Trans MOSFET N-CH 100V 300A 9-Pin(8+Tab) HSOF T/R
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $3.846 | $3.85 |
| 10 | $3.323 | $33.23 |
| 30 | $3.011 | $90.33 |
| 100 | $2.240 | $224.00 |
Inventory:6,259
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- 365 Days Quality Guarantee
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Part Number : IPT015N10N5
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Package/Case : HSOF-8
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Brands : INFINEON
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Components Categories : Power Field-Effect Transistors
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Datesheet : IPT015N10N5 DataSheet (PDF)
Overview of IPT015N10N5
Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | IPT015N10N5 | Rohs Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
| Package Description | SMALL OUTLINE, R-PSSO-F8 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | Infineon |
| Avalanche Energy Rating (Eas) | 652 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 32 A | Drain-source On Resistance-Max | 0.0015 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PSSO-F8 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 1200 A |
| Surface Mount | YES | Terminal Finish | TIN |
| Terminal Form | FLAT | Terminal Position | SINGLE |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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