• IPT012N08N5
IPT012N08N5

IPT012N08N5

Trans MOSFET N-CH 80V 300A 9-Pin(8+Tab) HSOF T/R

Quantity Unit Price(USD) Ext. Price
1 $3.279 $3.28
10 $3.083 $30.83
30 $2.966 $88.98
100 $2.866 $286.60

Inventory:7,969

*The price is for reference only.
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Overview of IPT012N08N5

Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.

IPT012N08N5

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Infineon Technologies
Series OptiMOS™ Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 150A, 10V Vgs(th) (Max) @ Id 3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 223 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 40 V FET Feature -
Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN Base Product Number IPT012

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