IPW65R110CFD
Infineon IPW65R110CFD N-channel MOSFET Transistor, 31.2 A, 700 V, 3-Pin TO-247
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $14.914 | $14.91 |
| 10 | $14.370 | $143.70 |
| 30 | $13.426 | $402.78 |
| 100 | $12.604 | $1,260.40 |
Inventory:6,563
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Part Number : IPW65R110CFD
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Package/Case : TO-247-3
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Brands : INFINEON
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Components Categories : Power Field-Effect Transistors
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Datesheet : IPW65R110CFD DataSheet (PDF)
Overview of IPW65R110CFD
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Key Features
- Ultra-fast body diode
- Very high commutation ruggedness
- Extremely low losses due to very low FOM Rdson^Qg and Eoss
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC
- (J-STD20 and JESD22)
- Pb-free plating, Halogen free mold compound
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | IPW65R110CFD | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-247 |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Samacsys Manufacturer | Infineon | Avalanche Energy Rating (Eas) | 845 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
| Drain Current-Max (Abs) (ID) | 31.2 A | Drain Current-Max (ID) | 31.2 A |
| Drain-source On Resistance-Max | 0.11 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 277.8 W | Pulsed Drain Current-Max (IDM) | 99.6 A |
| Qualification Status | Not Qualified | Surface Mount | NO |
| Terminal Finish | TIN | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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