IPD50N04S4-08
MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $0.622 | $0.62 |
| 10 | $0.511 | $5.11 |
| 30 | $0.455 | $13.65 |
| 100 | $0.400 | $40.00 |
| 500 | $0.368 | $184.00 |
| 1000 | $0.350 | $350.00 |
Inventory:7,536
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Part Number : IPD50N04S4-08
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Package/Case : TO-252-3
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Brands : INFINEON
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Components Categories : Power Field-Effect Transistors
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Datesheet : IPD50N04S4-08 DataSheet (PDF)
Overview of IPD50N04S4-08
Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Key Features
- Reduced energy stored in output capacitance (Eoss)
- High body diode ruggedness
- Reduced reverse recovery charge (Qrr)
- Reduced gate charge (Qg)
- Overall Features
- BENEFITS
- Reduction of switching losses, improvement of light load efficiency
- Higher reliability under critical operating conditions
- Lower possibility of hard commutation in resonant topologies
- Improvement in light load efficiency
- Lower gate drive capability required
- Easy control of switching behavior
- Outstanding reliability with proven CoolMOSTM quality
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | IPD50N04S4-08 | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-252 |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | Pin Count | 4 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 52 Weeks | Samacsys Manufacturer | Infineon |
| Avalanche Energy Rating (Eas) | 55 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 40 V |
| Drain Current-Max (Abs) (ID) | 50 A | Drain Current-Max (ID) | 50 A |
| Drain-source On Resistance-Max | 0.0079 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 46 W |
| Pulsed Drain Current-Max (IDM) | 200 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | TIN |
| Terminal Form | GULL WING | Terminal Position | SINGLE |
| Transistor Element Material | SILICON | Manufacturer | Infineon |
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 50 A | Rds On - Drain-Source Resistance | 7.2 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 22.4 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 46 W |
| Channel Mode | Enhancement | Qualification | AEC-Q101 |
| Tradename | OptiMOS | Series | OptiMOS-T2 |
| Brand | Infineon Technologies | Fall Time | 6 ns |
| Height | 2.3 mm | Length | 6.5 mm |
| Product Type | MOSFET | Rise Time | 7 ns |
| Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 5 ns |
| Typical Turn-On Delay Time | 5 ns | Width | 6.22 mm |
| Part # Aliases | IPD5N4S48XT SP000711450 IPD50N04S408ATMA1 | Unit Weight | 0.011640 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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