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IPD042P03L3GATMA1

MOSFET TRENCH <= 40V

Inventory:5,651

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Overview of IPD042P03L3GATMA1

Infineon's IPD042P03L3GATMA1 Mosfet is a top-of-the-line P-Channel transistor that offers exceptional performance in a compact TO-252 package. With a maximum Drain-Source Voltage (Vds) of -30V and a continuous Drain Current (Id) rating of -70A, this Mosfet can handle high-power applications with ease. The ultra-low On Resistance (Rds(On)) of 0.0035Ohm ensures minimal power loss and heat generation, while the Threshold Voltage (Vgs) of -1.5V provides precise control over the device's operation. Additionally, the Mosfet is RoHS compliant, making it environmentally friendly and safe for use in various electronic projects

Key Features

  • - Technology: Si
  • - Transistor Type: 1 P-Channel
  • - Transistor Polarity: P-Channel
  • - Number of Channels: 1 Channel
  • - Vds Max: -20 V
  • - Id Continuous Drain Current: 42 A
  • - Rds On Max: 3 mOhm
  • - Vgs Max: -4 V

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 269 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 70 A Drain-source On Resistance-Max 0.0068 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL Pulsed Drain Current-Max (IDM) 280 A
Surface Mount YES Terminal Finish TIN
Terminal Form GULL WING Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON
Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TO-252-3
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 70 A
Rds On - Drain-Source Resistance 6.8 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 131 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 150 W Channel Mode Enhancement
Brand Infineon Technologies Fall Time 22 ns
Forward Transconductance - Min 65 S Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Rise Time 167 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 89 ns Typical Turn-On Delay Time 21 ns
Width 6.22 mm Part # Aliases IPD042P03L3 G SP001127836
Unit Weight 0.011640 oz

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