IPB017N08N5ATMA1
Trans MOSFET N-CH 80V 177A 3-Pin(2+Tab) D2PAK T/R
Inventory:7,367
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : IPB017N08N5ATMA1
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Package/Case : PG-TO263-3
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : IPB017N08N5ATMA1 DataSheet (PDF)
Overview of IPB017N08N5ATMA1
N-Channel 80 V 120A (Tc) 375W (Tc) Surface Mount PG-TO263-3
Key Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance RDS(on)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS compliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
Package Description | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | Infineon | Avalanche Energy Rating (Eas) | 1228 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 80 V | Drain Current-Max (ID) | 120 A |
Drain-source On Resistance-Max | 0.0021 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263AB | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 480 A |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Series | OptiMOS™ | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V | Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 280µA | Gate Charge (Qg) (Max) @ Vgs | 223 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 16900 pF @ 40 V |
Power Dissipation (Max) | 375W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TO263-3 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Base Product Number | IPB017 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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