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SQ3461EV-T1-GE3

Automotive P-Channel MOSFET with 175 °C temperature rating

Inventory:6,481

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Overview of SQ3461EV-T1-GE3

**Expression 3:** "The cutting-edge SQ3461EV-T1_GE3 is specifically designed for high-frequency applications, offering unparalleled performance and reliability in radar, satellite communication, and mobile communication systems

Key Features

  • Wide operating temperature range -40 to 150°C
  • Highly resistant to electromagnetic interference
  • Fully tested for reliability and durability

Application

  • High power density
  • Renewable energy systems
  • Efficient power conversion

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSOP-6 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 8 A Rds On - Drain-Source Resistance 21 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 28 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 5 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename TrenchFET Series SQ
Brand Vishay / Siliconix Configuration Single
Fall Time 71 ns Height 1.1 mm
Length 3.05 mm Product Type MOSFET
Rise Time 52 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 92 ns Typical Turn-On Delay Time 12 ns
Width 1.65 mm Part # Aliases SQ3461EV-T1_BE3
Unit Weight 0.000705 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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